نتایج جستجو برای: majority gate

تعداد نتایج: 216355  

Journal: :Complex Systems 2022

The initial majority identification task is a fundamental test problem in cellular automaton research. To pass the test, two-state has to attain uniform configuration consisting of only state that was initially majority. It does so solely through its local, internal dynamics—i.e., success an example emergent computation. Finding new, better-performing automata continues be interest for what add...

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

Journal: :CoRR 2017
Gleb Posobin

In this paper we examine the problem of computing majority functionMAJn on n bits by depthtwo formula, where each gate is a majority function on at most k inputs. We present such formula that gives the first nontrivial upper bound for this problem, with k = 2 3n + 4. This answers an open question in [7]. We also look at this problem in adaptive setting — when we are allowed to query for value o...

2007
D. F. M. Strauss

Although it may seem easy to compare states in terms of the number of their citizens and the size and shape of their countries, the connection between the democratic state and the numerical and spatial considerations is more subtle and complex, for theoretical views of society and the state tend to diverge into opposing positions that explore themutually exclusive extremes ofatomism and holism....

In advance longwall mining, the safety of mine network, production rate, and consequently, economic conditions of a mine are dependent on the stability conditions of gate roadways. The gate roadway stability is a function of two important factors: 1) characteristics of the excavation damaged zone (EDZ) above the gate roadway and 2) loading effect due to the caving zone (CZ) above the longwall w...

In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...

2002
A. J. MOUTHAAN

A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is saturated. d.c. and dynamic analysis of BIL-gate behaviour are given. A minimum gate delay of well belo...

Journal: :Philosophy Compass 2014

2014
Benjamin Levine

The literature survey has been carried out in 3 phases. The first phase focussed on LDPC Codes .The 2 nd Phase on Projective Geometry and Majority Logic decoding and the 3 rd phase on p-adic extension of PG LDPC Codes. In the first phase, the introduction to LDPC Codes, their construction,comparision is done in the references from [1],[9]-[21].The decoding methodologies and various techniques a...

2016
MEGHNA G. MANKALALE SACHIN S. SAPATNEKAR

All-Spin Logic (ASL) devices provide a promising spintronics-based alternative for Boolean logic implementations in the post-CMOS era. In principle, any logic functionality can be implemented in ASL. In practice, the performance of an ASL gate is significantly affected by layout choices, but such implications have not been adequately explored in the past. This paper proposes a systematic approa...

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