We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate ∼1 µm/h with control silicon doping concentration from 5 × 1016 1019 cm−3. In S-MBE, pre-oxidized gallium in form molecular beam that is 99.98% Ga2O, i.e., suboxide, supplied. Directly supplying Ga2O surface bypasses rate-limiting first step two-step reaction mechanism involved by conventional MBE. As ...

Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPEand MBE-grown phot...

Half-metallic Co 2 FeAl Heusler alloy thin films with various thickness were prepared by MBE method and its magnetic crystalline properties investigated. At the of 20 nm above, good high B2-order parameter was obtained. In addition, damping constant evaluated from peak-to-peak linewidth measured FMR ultra-low below 0.001 obtained at film 30 nm. These results are thanks to excellent half-metalli...

Regulation of DNMT1 is critical for epigenetic control of many genes and for genome stability. Using phylogenetic analysis we characterized a block of 27 nucleotides in the 3'UTR of Dnmt1 mRNA identical between humans and Xenopus and investigated the role of the individual elements contained within it. This region contains a cytoplasmic polyadenylation element (CPE) and a Musashi binding elemen...