The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2–4μm range, while the deposition temperature was in the 650o-825°C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investiga...

We have characterized the ~234! and ~432! reconstructions of GaAs and InAs ~001! that are present in a metalorganic vapor-phase epitaxy ~MOVPE! reactor. Scanning tunneling micrographs show that these surfaces are terminated with arsenic and gallium ~or indium! dimers. The ~234! dimer row exhibits a mottled appearance, which is ascribed to the adsorption of alkyl groups on some of the sites. On ...

The conceptual relationship between crystal reactivity, stability and meta-stability, solubility and morphology on the one hand and shape, charge distribution, chirality and distribution of functional groups over the molecular surfaces on the other hand is discussed, via a number of examples coming from three decades of research in the field of crystal engineering at the University of Bologna. ...

We are developing inkjet printing as a low cost, high throughput approach to the deposition of front contacts for Si solar cells. High deposition rates of 1μm per printing pass were achieved with a new metalorganic ink composed of silver(trifluoroacetate) in ethylene glycol. The printing conditions were optimized to achieve a relatively high line resolution of 120 μm. The optimal parameters for...

InGaAsN-GaAsSb type-II ‘‘W’’ quantum well structures have been grown by metalorganic chemical vapor deposition (MOCVD). Photoluminescence and X-ray diffraction measurements indicate that thin layers (2–2.5 nm) of GaAs1 ySby and InGaAs1 xNx can be grown with compositions of y 1⁄4 0:3 and x 1⁄4 0:02. ‘‘W’’ structures with different N contents indicate that emission wavelengths in the 1.4–1.6 mm r...

Dense, high-index, and reproducible scandium oxide (Sc2O3) thin films with high mechanical strength were grown on glass substrates by metalorganic chemical-vapor deposition. The influence of deposition temperature on the microstructure evolution and optical properties of Sc2O3 thin films was investigated by x-ray diffraction, scanning electron microscopy, atomic-force microscopy, transmission e...

A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AlN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AlN/GaN SL designed for intersubband transition at a telecommunication wavelength of ~1.5 μm, is grown...

AlGaAs/AlGaAs double-heterostructure (DH) visible lasers with low threshold current densities have been grown by metalorganic chemical vapor deposition (MOCVD). Proton-isolated narrow stripe visible lasers have good performance and uniformity of the characteristics over the whole wafer is excellent. Contamination of the undoped AlGaAs depends on the partial pressure ratio of V element to 111 el...

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Spatially, spectrally, and temporally resolved cathodoluminescence ~CL! techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells ~QWs!. Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition...