We propose a codoping method of using acceptors and donors simultaneously as a solution to the crucial doping problem, or unipolarity, of wide-band-gap semiconductors which exhibit an asymmetry in their ability to be doped as n-type or p-type. The deliberate codoping of donors is essential for the enhancement of acceptor incorporation, decrease of the binding energy of the acceptor impurity and...

We have performed a density functional theory investigation on the structural and electronic properties of pristine and Nitrogen-doped TiO2 anatase nanoparticles as the adsorbents for removal and degradation of hydrazine molecules in the environment. We have presented the most stable adsorption configurations and examined the interaction of hydrazine molecule with these doped and undoped nanopa...

Magnetic semiconductors with coupled magnetic and electronic properties are of high technological and fundamental importance. Rare-earth elements can be used to introduce magnetic moments associated with the uncompensated spin of 4f-electrons into the semiconductor hosts. The luminescence produced by rare-earth doped semiconductors also attracts considerable interest due to the possibility of e...

The GaN materials system has established itself as being very important for the next generation of high-power density devices for optical, microwave, and radar applications [1] [2] [3] [4] [5]. At the same time, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimi...

Charging effects in an AlxGa1 xN/GaN heterostructure field-effect transistor epitaxial layer structure have been studied using scanning capacitance microscopy. Voltages of 6 V applied between an AlxGa1 xN/GaN sample structure and a conducting proximal probe tip are found to create trapped charge in both doped and undoped heterostructures. Scanning capacitance measurements obtained over a wide r...

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in ...

We report on an operando XPS investigation of a GaN diode, by recording the Ga2p3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistiv...

The emission at -2.8 eV from heavily doped p-GaN, known as the blue luminescence (BL), has been studied by selective excitation using a dye laser tunable between 2.7-3.0 eV. The peak position and intensity of the BL are found to exhibit an unusual dependence on the excitation photon energy. We have explained our results with a shallow-donor and deep-acceptors pair recombination model which incl...

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N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the buil...