A thin, chemically inert 3C-SiC layer between GaN and Si helps not only to avoid the "melt-back" effect, but also to inhibit the crack generation in the grown GaN layers. The quality of GaN layer is heavily dependent on the unique properties of the available 3C-SiC/Si templates. In this paper, the parameters influencing the roughness, crystalline quality, and wafer bow are investigated and engi...

This paper reports on SiC devices operating in a dc-dc buck converter under extremely high ambient temperatures. To this end, the authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor. The converter was tested at ambient temperatures up to 400◦C. Although the conduction loss of the SiC JFET increases slightly with increasing temperature...

4H-SiC is a wide-bandgap semiconductor with potential applications in power devices. The lack of a liquid phase in SiC hinders conventional crystal growth from the melt; consequently, SiC wafers still have low quality and are nearly 100 times more expensive than Si wafers. To take advantage of the solution growth for improving the quality and reducing the cost of SiC, Ni addition to Si-Ti flux ...

UNLABELLED Additional non-English language abstract (in Dutch) BACKGROUND A properly conducted surgical informed consent process (SIC) allows patients to authorize an invasive procedure with full comprehension of relevant information including involved risks. Current practice of SIC may differ from the ideal situation. The aim of this study is to evaluate whether SIC practiced by Dutch genera...

Mullite–SiC nanocomposites are synthesized by introducing surface modified sol–gel mullite coated SiC particles in the matrix and densification and associated microstructural features of such precursor are reported. Nanosize SiC (average size 180 nm) surface was first provided with a mullite precursor coating which was characterized by the X-ray analysis and TEM. An average coating thickness of...

A comprehensive molecular dynamics study to shed light on the existence of SiC based cage nanostruc-tures Si m C n , together with their stability, structural and other properties, in the range of compositions with n/(n + m) from 0.4 to 0.6 has been carried out using an efficient semi-empirical Hamiltonian scheme. Through this study, a series of self-assembled stable (even up to 2000 K) SiC bas...

Due to its desirable material properties, Silicon Carbide (SiC) has become an alternative material to replace Si for Microelectromechanical Systems (MEMS) applications in harsh environments. To promote SiC MEMS development towards future cost-effective products, main technology areas in material deposition and processes have attracted significant interest. The developments in these areas have c...

The subcarriers of orthogonal frequency division multiplexing (OFDM) systems may fail to keep orthogonal to each other under timevarying channels. The loss of orthogonality among the subcarriers will degrade the system performace, and this effect is named intercarrier interference (ICI). In this paper, a Wiener-based successive interference cancellation (SIC) scheme is proposed to detect the OF...

Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability in relation to growth conditions, such as supersaturation and Si/C ratio. It is shown that at low temperature/supersaturation spiral 6H-SiC growth is favored, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation ...

The paper presents a model developed for numerical simulation of temperature dependence of a hypothetical Si and SiC diode and BJT current-voltage characteristics. A classical Si PN wide-base diode model and an E-M BJT model are used with SiC semiconductor-specific parameters. Intrinsic carrier concentrations, carrier mobility temperature and doping concentration dependence are calculated for b...