نتایج جستجو برای: nanoscale schottky

تعداد نتایج: 27775  

2007
Koichi Narahara Toru Nakamichi Tetsuya Suemitsu Taiichi Otsuji Eiichi Sano

The characteristics of composite rightand left-handed CRLH transmission lines periodically loaded with Schottky varactors are discussed in relation to the development of solitons. CRLH lines are highly dispersive and thus, when appropriately designed, compensate the effect of nonlinearity introduced by the Schottky varactors to support solitons. The reductive perturbation method applied to the ...

2013
Meisam Rahmani Mohammad Taghi Ahmadi Hediyeh Karimi Feiz Abadi Mehdi Saeidmanesh Elnaz Akbari Razali Ismail

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective ma...

2016
Junran Zhang Zhenyao Wu Minhao Zhang Wei Niu Ming Gao Ying Zhou Wenqing Liu Xuefeng Wang Rong Zhang Yongbing Xu

We demonstrated the effect of superparamagnetic Fe3O4 nanoparticles on Schottky barriers of graphene, in which the Fe3O4 nanoparticles were fabricated by a hydrothermal method and the single-layer graphene sheets were mechanically exfoliated from Kish graphite. The Fe3O4 nanoparticles were superparamagnetic with the saturation magnetic moment of about 32 emu/g at room temperature. We have found...

2012
Siddarth Sundaresan

Electrical Characteristics of Industry’s first commercially available 1200 V rated SiC Schottky rectifiers, specially designed for operation at ≥ 250 °C are presented. These high-temperature SiC rectifiers fabricated in 1, 5, and 20 A current ratings feature reverse leakage currents of < 3 mA/cm at 1200 V up to temperatures as high as 300 °C. GeneSiC’s 1200 V/20A High Temperature Schottky (desi...

1998
Simon Davis

Several arguments are given for the summability of the superstring perturbation series. Whereas the Schottky group coordinatization of moduli space may be used to provide refined estimates of large-order bosonic string amplitudes, the super-Schottky group variables define a measure for the supermoduli space integral which leads to upper bounds on superstring scattering amplitudes. The genus-dep...

2007
Y. A. Antipov D. G. Crowdy

The construction of analogues of the Cauchy kernel is crucial for the solution of Riemann–Hilbert problems on compact Riemann surfaces. A formula for the Cauchy kernel can be given as an infinite sum over the elements of a Schottky group, and this sum is often used for the explicit evaluation of the kernel. In this paper a new formula for a quasi-automorphic analogue of the Cauchy kernel in ter...

2009

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by usin...

1999
Mutlu Gökkavas Bora M. Onat Ekmel Özbay E. P. Ata Selim Ünlü

Resonant cavity enhanced (RCE) photodiodes (PD’s) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the electrical properties of the photodetector remain mostly unchanged; however, the presence of the microcavity causes wavelength selectivity accompanied by a drastic increase of ...

2003
Necmi Biyikli Tolga Kartaloglu Orhan Aytur Ibrahim Kimukin Ekmel Ozbay

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/ Al0.2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devic...

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