We demonstrate that the optoelectronic properties of percolating thin films of silver nanowires (AgNWs) are predominantly dependent upon the length distribution of the constituent AgNWs. A generalized expression is derived to describe the dependence of both sheet resistance and optical transmission on this distribution. We experimentally validate the relationship using ultrasonication to contro...

Abstract In this study, we experimentally demonstrate a miniature fiber thermometer based on tip-integrated ZnO-nanowire-nanograting. The sensor has diameter less than 1 µm and the length of Bragg grating is sub-10 µm. ZnO-nanowire-nanograting sensitive to environmental temperature change. Thus, intensity light whose wavelength in rising or falling region nanograting spectrum will vary with shi...

In this paper, the scattering of a plane monochromatic electromagnetic wave from a nanowire with circular cross-section in the transverse electric (TE) mode is simulated using the well-known Stratton-Chu surface integral equations. For an ordinary dielectric nanowire the refraction phenomenon is nicely simulated. In the case of a plasmonic nanowire no sign of surface plasmon excitation and prop...

in this paper, a numerical solution procedure is presented for the forced vibration of a piezoelectric nanowire under thermo-electro-mechanical loads based on the nonlocal elasticity theory within the framework of timoshenko beam theory. using hamilton’s principle, the nonlocal governing differential equations are derived. the governing equations and the related boundary conditions are discreti...

We perform a large-scale statistical analysis (>2000 independent simulations) of the elongation and rupture of gold nanowires, probing the validity and scope of the recently proposed ductile-to-brittle transition that occurs with increasing nanowire length [Wu et al. Nano Lett. 2012, 12, 910-914]. To facilitate a high-throughput simulation approach, we implement the second-moment approximation ...

The presented model based on the quantum confinement and high electric filed effect illustrates velocity approach to the modeling of a P-type silicon nanowire transistor. It has been clarified that the intrinsic velocity of nanowire and other hetero-structure field-effect transistors (FETs) is governed by the transit time of holes (electrons). The length of the channel for ballistic channel is ...

Realizing visionary concepts of integrated photonic circuits, nanospectroscopy, and nanosensing will tremendously benefit from dynamically tunable coherent light sources with lateral dimensions on the subwavelength scale. Therefore, we demonstrate an individual nanowire laser based device which can be gradually tuned by reversible length changes of the nanowire such that uniaxial tensile stress...

We report a strategy for achieving epitaxial, vertically aligned cadmium chalcogenide (CdS, CdSe, and CdTe) nanowire arrays utilizing van der Waals epitaxy with (001) muscovite mica substrate. The nanowires, grown from a vapor transport process, exhibited diameter uniformity throughout their length, sharp interface to the substrate, and positive correlation between diameter and length with pref...