Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is approximately 62 degrees . The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic fo...

Designing lasing wavelengths and modes is essential to the practical applications of nanowire (NW) lasers. Here, according to the localized photoluminescence spectra, we first demonstrate the ability to define lasing wavelengths over a wide range (up to 119 nm) based on an individual bandgap-graded CdSSe NW by forward cutting the NW from CdSe to CdS end. Furthermore, free spectral range (FSR) a...

Understanding the optical gain and mode-selection mechanisms in semiconductor nanowire (NW) lasers is key to the development of high-performance nanoscale oscillators, amplified semiconductor/plasmon lasers and single photon emitters, and so forth. Modification of semiconductor band structure/bandgap through electric field modulation, elemental doping, or alloying semiconductors has so far gain...

Vertically aligned ZnO-ZnS heterojunction nanowire (NW) arrays were synthesized by thermal evaporation in a tube furnace under controlled conditions. Both ZnO and ZnS are of wurtzite structure, and the axial heterojunctions are formed by epitaxial growth of ZnO on ZnS with an orientation relationship of [0001](ZnO)//[0001](ZnS). Vertical ZnS NW arrays have been obtained by selectively etching Z...

Surface plasmon polaritons (SPPs)-based nanowire (NW) waveguides demonstrate promising potentials in the integrated nanophotonic circuits and devices. The realization of controlling SPPs propagation in NWs is significant for the performance of nanophotonic devices when employed for special function. In this work, we report the effect of symmetry breaking degrees on SPPs propagation behavior in ...

In order to manufacture short gap single Si nanowire (NW) field effect transistor (FET) by imprinting and transferring method, we introduce the method using Al2O3 sacrificial layer. The diameters of cylindrical Si NW addressed between Au electrodes by dielectrophoretic (DEP) alignment method are controlled to 106, 128, and 148 nm. After imprinting and transfer process, cylindrical Si NW is embe...

A rapid technique is necessary to quantitatively detect the density of nanowire (NW) and nanotube arrays in one-dimensional devices which have been identified as useful building blocks for nanoelectronics, optoelectronics, biomedical devices, etc. Terahertz (THz) time-domain spectroscopy was employed in this research to detect the density of aligned Ni NW arrays. The transmitted amplitude of TH...

The growth of self-catalyzed ternary core-shell GaAsP nanowire (NW) arrays on SiO2 patterned Si(111) substrates has been demonstrated by using solid-source molecular beam epitaxy. A high-temperature deoxidization step up to ∼ 900 °C prior to NW growth was used to remove the native oxide and/or SiO2 residue from the patterned holes. To initiate the growth of GaAsP NW arrays, the Ga predeposition...