A new graphene-based composite structure, monolayer-ordered macroporous film composed of a layer of orderly arranged macropores, was reported. As an example, SnO2-reduced graphite oxide monolayer-ordered macroporous film was fabricated on a ceramic tube substrate under the irradiation of ultra-violet light (UV), by taking the latex microsphere two-dimensional colloid crystal as a template. Grap...

The variety of semiconductor materials has been extended in various directions, for example, to very wide bandgap materials such as oxide semiconductors as well as to amorphous semiconductors. Crystalline β-Ga2O3 is known as a transparent conducting oxide with an ultra-wide bandgap of ~ 4.9 eV, but amorphous (a-) Ga2Ox is just an electrical insulator because the combination of an ultra-wide ban...

Optical waveguide lightmode spectroscopy (OWLS) is usually applied as a biosensor system to the sorption-desorption of proteins to waveguide surfaces. Here, we show that OWLS can be used to monitor the quality of oxide thin film materials and of coatings of pulsed laser deposition synthesized CdSe quantum dots (QDs) intended for solar energy applications. In addition to changes in data treatmen...

In this work, we prepared oriented mesoporous thin films of silica on various solid substrates using the pluronic block copolymer P123 as a template. We attempted to insert guest iron oxide (FexOy) nanoparticles into these films by two different methods: (a) by co-precipitation-where iron precursors are introduced in the synthesis sol before deposition of the silica film-and subsequent oxide pr...

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

This paper considers the application of surface-analytical techniques to characterize both thin (-2 nm) passive oxide films and thick (up to 1 pm) oxides formed on metals and alloys a t high temperature. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), Mossbauer spectroscopy, X-ray absorption near edge spectroscopy (XANES), secondary ion mass spectrometry (SIMS) and el...

Porosity is a major concern in the production of light metal parts. This work aims to identify some of the mechanisms of microporosity formation in magnesium alloy AZ91. Microstructure analysis was performed on several samples obtained from gravity-poured ingots in graphite plate molds. Temperature data during cooling was acquired with type K thermocouples at 60 Hz at three locations of each ca...

a r t i c l e i n f o Keywords: Aluminum doped zinc oxide Post-annealing Dielectric barrier discharge Indium–tin oxide DC magnetron X-ray photoelectron spectroscopy Aluminum-doped zinc oxide (AZO) is a material that can have high electrical conductivity while being highly transparent at the same time. It has been used in many applications such as displays, mobile devices and solar cells. Curren...

High-performance and low-temperature-compatible solid phase crystallized polycrystalline silicon thin film transistors using thermal oxide buffered aluminum oxide (Al2O3) as gate dielectric are demonstrated. By growing a thermal oxide buffer layer using two-step annealing method, the interface quality is greatly improved, resulting in excellent device performance.