Si-Ge-Sn alloys can achieve bandgaps in the 1eV range and can facilitate the integration of III-V materials with both Ge and Si substrates. The development and current status of Si-Ge-Sn epilayer growth at Translucent is presented. The main aims of this work are the development of infrared absorbers with bandgaps below that of Ge for infrared detectors, 1 eV semiconductor materials for photovol...
