Si-Ge-Sn alloys can achieve bandgaps in the 1eV range and can facilitate the integration of III-V materials with both Ge and Si substrates. The development and current status of Si-Ge-Sn epilayer growth at Translucent is presented. The main aims of this work are the development of infrared absorbers with bandgaps below that of Ge for infrared detectors, 1 eV semiconductor materials for photovol...

Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we will describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work will show that the improved technique is capable of measuring samples ranging in size from submicron thin films to lar...