Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped layers investigated the application in front-end-of-line due to their resilience high thermal treatments. Due its very confined doping concentration range, Si:HfO2 atomic layer deposition often exhibited a crossflow pattern across 300 mm wafer. Here, plasma enhanced is ...

Investigations of atomic-layer deposition GaP layers on Si substrates with different orientations and preliminary surface treatment have been carried out. The was out by the method plasma enhanced using in situ argon plasma. It shown that at initial stage growth precisely oriented (100) misorientation, two-dimensional occurs both after chemical treatment. Upon (111) substrates, surface, a trans...

ZIF-8 was synthesized by subjecting ZnO thin films deposited via plasma-enhanced atomic layer deposition to a 2-methylimidazole vapor. The impact of the conversion time as well density and thickness precursor on resulting layers were investigated. Grazing Incidence X-ray diffraction reveals preferred (100) or (111) orientation crystals, depending precursor, with more prominent at longer times. ...

The bias stability of zinc-tin-oxide ZTO thin-film transistors TFTs with either Al2O3 gate dielectrics deposited via atomic layer deposition ALD or SiO2 gate dielectrics deposited via plasma-enhanced chemical vapor deposition PECVD was compared. Both device types showed incremental mobility 11 cm2 /V s, subthreshold slopes 0.4 V /dec, and ION / IOFF ratios of 107. During repeated ID-VGS sweepin...