This paper propose a new design and analysis of MEMS sensor array based on thermal stress and electric current properties. The COMSOL Multiphysics 4.3 software is used to design the sensor array of the sensing layer. The material selection is done based on the thermal analysis of the sensor array. The polysilicon yield a maximum displacement of 0.00143μm and also it is suitable for human skin. ...

This research reports a facile ultrasonic approach for the synthesis of iron vanadate (FeVO4) nanoparticles with the aid of ammonium metavanadate (NH4VO3) and Fe(NO3)3.9H2O as the starting reagents without adding external surfactant, capping agent or template in an aqueous solution. Furthermore, to examine the solar cell application of as-synthesized iron vanadate (FeVO4) nanoparticles, FTO/TiO...

SiGe heterojunction bipolar transistors (HBTs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p SiGe base and n-Si emitter cap. DC electrical characteristics are compared with cross-section TEM images to identify the mechanisms and origins of leakage currents associated with the epitaxy in two different types o...

We measure end-of-line polysilicon waveguide propagation losses of ~6-15 dB/cm across the telecommunication O-, E-, S-, C- and L-bands in a process representative of high-volume product integration. The lowest loss of 6.2 dB/cm is measured at 1550 nm in a polysilicon waveguide with a 120 nm x 350 nm core geometry. The reported waveguide characteristics are measured after the thermal cycling of ...

Here, I review the development of a polysilicon photonic platform that is optimized for integration with electronics fabricated on bulk silicon wafers. This platform enables large-scale monolithic integration of silicon photonics with microelectronics. A single-polysilicon deposition and lithography mask were used to simultaneously define the transistor gate, the low-loss waveguides, the deplet...

In this paper, an industrially-oriented two-scale approach is provided to model the drop-induced brittle failure of polysilicon MEMS sensors. The two length-scales here investigated are the package (macroscopic) and the sensor (mesoscopic) ones. Issues related to the polysilicon morphology at the micro-scale are disregarded; an upscaled homogenized constitutive law, able to describe the brittle...

A study is made of germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors made by germanium implantation. Implanted Ge is found to diffuse from the single-crystal silicon substrate into deposited polysilicon emitter layers during rapid thermal anneal at 1045 °C. Measurements of germanium diffusivity in polycrystalline silicon are reported at temperatures between ...