Semiconductor technology has achieved remarkable results through its evolution over the years. Today’s devices have significantly improved performance, especially in reduced drain-source on-state resistance, lower gate charge, and faster switching speeds. The overall system low-power consumption and higher performance is the name of the game in today’s competitive world. Most power MOSFET devic...

We report the measurements of the temperature variations of the flexoelastic coefficient (e(*)/K) of a host calamitic liquid crystal (RO) and its mixture with two guest bent-core (BC-120 and BC-60) liquid crystals. The bent-core (BC) molecules have different core structures and bend angles; namely, θ=/~120° and =/~60°, respectively. We find that e(*)/K is independent of temperature and decrease...

We report the magnetoresistance, magnetothermopower and quantum oscillation study of Sb2Te2Se single crystal. The in-plane transverse magnetoresistance exhibits a crossover at a critical field B∗ from semiclassical weak-field B dependence to the high-field unsaturated linear magnetoresistance which persists up to the room temperature. The low-temperature Seebeck coefficient is negative in zero ...

Thermal electron attachment to C(60) has been studied by relative rate measurements in a flowing afterglow Langmuir probe apparatus. The rate coefficients of the attachment k(1) are shown to be close to 10(-6) cm(3) s(-1) with a small negative temperature coefficient. These results supersede measurements from the 1990s which led to much smaller values of k(1) with a large positive temperature c...

Spiral inductors fabricated using a 90nm CMOS process have been characterized and analyzed. The extracted series resistance increases with frequency and temperature. The extracted resistance temperature coefficient exhibits a strong dependence on operating frequency. It gradually decreases with frequency and is different from the results using DC temperature coefficients. A single π-model is us...