We present a computational and experimental study of a novel terahertz (THz) device resulting from hybridization of metamaterials with pseudomorphic high electron mobility transistors (HEMTs), fabricated in a commercial gallium arsenide (GaAs) process. Monolithic integration of transistors into each unit cell permits modulation at the metamaterial resonant frequency of 0.46 THz. Characterizatio...

This paper presents the design, fabrication and performance of a three-stage 155GHz monolithic low noise amplifier (LNA) using 0.1 -pm pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology. This amplifier exhibits a measured small signal gain of 12 dB at 155 GHz, and more than 10 dB gain from 151 to 156 GHz. When this amplifier is biased for low noise figure, a noise figure of 5.1 dB with associ...

The development and local structure of height-selected 3-layer Ag islands on fivefold surfaces of icosahedral Al-Pd-Mn quasicrystals is characterized by STM for Ag deposition at 365 K. Heterogeneous nucleation of pseudomorphic single layer high islands is followed by rapid formation of 2nd and 3rd layers and subsequent lateral spreading, where each of these 3 layers consists of a family of nonf...

We have grown p-type ZnCdMgSe quaternary layers and have fabricated light-emitting diodes (LEDs) from pseudomorphic quantum well (QW) structures of ZnCdSe/ZnCdMgSe grown on InP substrates that emit throughout the visible range. Nearly identical structures, di!ering only in the ZnCdSe QW layer thickness and/or composition can produce light ranging from blue to red. Good current}voltage character...

A hybrid oscillator operating at 12 GHz and 77 K was designed and characterised. The design incorporated on a single substrate a passive superconductive circuit and a 111-V active device. YBaCuO films (300nm), grown on MgO, had a surface resistance at 77 K of 0.3 m a scaled to 12 GHz. The DC and RF characteristics of the pseudomorphic HEMT showed minor differences before and after hybridation. ...

The feasibility of creating atomic wires on vicinal silicon surfaces via pseudomorphic step-edge decoration has been analyzed for the case of Ga on Si(112). Scanning tunneling microscopy and density functional theory calculations indicate the formation of Ga zigzag chains intersected by quasiperiodic vacancy lines or "misfit dislocations." This structure strikes a balance between the system's d...

By combining Raman scattering from the cleaved edge and under hydrostatic pressure, we have accurately determined the tetragonal phonon deformation potentials of strained Si1−xGex alloys in the entire compositional range for the Ge-like, Si-like, and mixed Si–Ge optical modes. A known biaxial strain is induced on thin alloy layers by pseudomorphic epitaxial growth on silicon and subsequent capp...

An effective method for molecular beam epitaxial construction of metastable, pseudomorphic SnGe/ Ge~001! heterostructures is presented. This method exploits a surfactant species, Bi, to alter Sn surface-segregation kinetics. Using the x-ray standing wave technique, we demonstrate not only that Bi segregates to the growth surface more strongly than Sn, but that it also dramatically suppresses th...

As an extension of our previous works in the optical-microwave interaction field, this paper shows the result of the research on large signal dynamic behavior (Pulsed I/V curves) of AlGaAs P-HEMT (pseudomorphic high electron mobility transistor) devices, in the overall I/V plane, when the incident optical input power is changed. A complete bias and optical power dependent of the large signal mo...

An LNA design and simulation using ED02AH Technology in 0.2-μm GaAs Pseudomorphic HEMT process and 0.35-μm HBT SiGe BiCMOS process are reported as a case of comparison. This work uses an identical circuit topology for both processes which is a 3-volt two stage cascode single-ended topology with a resistive shunt feedback. This LNA is developed for 2.4 GHz ISM band applications. This letter desc...