The possibility to achieve laser action at different THz frequencies employing the so-called vertical transition will be discussed. The intra-well or vertical optical transition presents a number of features that makes it an ideal candidate for a systematic study of resonant tunnelling and dephasing in quantum cascade lasers. Laser action at 3.5 THz with very low threshold employing a single qu...

Rational design and synthesis of nanowires with increasingly complex structures can yield enhanced and/or novel electronic and photonic functions. For example, Ge/Si core/shell nanowires have exhibited substantially higher performance as field-effect transistors and low-temperature quantum devices compared with homogeneous materials, and nano-roughened Si nanowires were recently shown to have a...

A method is described for the optimized design of quantum-well (QW) structures, in respect to maximizing the stimulated gain in optically pumped intersubband lasers. It relies on applying supersymmetric quantum mechanics (SUSYQM) to an initial Hamiltonian, in order to both map one bound state below the spectral range of the initial Hamiltonian, and to generate a parameter-controlled family of i...

A key component for the realization of silicon-photonics is an integrated laser operating in important communication band near 1.55 μm. One approach through use GaSb-based alloys, which may be grown directly on silicon. In this study, silicon-compatible strained Ga0.8In0.2Sb/Al0.68In0.32Sb composite quantum well (CQW) lasers GaSb substrates emitting at μm have been developed and investigated te...