DC transfer characteristic measurements have been carried out on one n-channel Si/SiGe MODFETs with a MOS gate at three different substrate biases. For our layer structure, electrons are supplied into the strained Si quantum well (QW) from the top heavily doped layer and below the QW is non-intentionally doped (setback). Here, we numerically studied the setback layer, for which the doping can b...

We report studies of the free carrier and donor-bound FIR excitations of a confined electron gas in modulation doped GaAs/AlGaAs quantum wells (QW) as a function of the QW electron density. Applied pressure is used to tune the electron density via the G±X well±barrier crossover. As electrons are removed from the QWs, we observe successively the quenching of cyclotron resonance, the evolution of...

An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. ...

Polarimetric imaging has proved its value in medical diagnostics, bionics, remote sensing, astronomy, and in many other wide fields. Pixel-level solid monolithically integrated polarimetric imaging photo-detectors are the trend for infrared polarimetric imaging devices. For better polarimetric imaging performance the high polarization discriminating detectors are very much critical. Here we dem...

Background: The RAS/MAPK pathway is dysregulated in a broad range of cancers, resulting downstream activation ERK1/2. ERAS-007 novel, potent, and orally bioavailable inhibitor ERK with prolonged target residence time (550 min). first-in-human Phase 1 study identified the 250 mg once weekly (QW) schedule for further evaluation based on manageable toxicity profile encouraging signs clinical activ...

Strained InGaAS/AIGaAS quantum well (QW) lasers operating at 0.98 jim are currently of great interest due to their suitability for pumping erbium-doped fiber amplifiers. They are reported to yield a lower noise figure and higher gain coefficient than the 1 .48 jim InGaAsflnP pump lasers as well as 0.8 p.m A1GaAS/GaAS pump lasers. In addition, the InGa.AS/AIGaAS strained QW lasers have lower thr...

Stacking growth of the InGaAs quantum dots (QDs) on top a carrier injection layer is very useful strategy to develop QD devices. This research aims study effect in hybrid structures with In0.4Ga0.6As surface (SQDs), coupled an either one buried QDs (BQDs) or In0.15Ga0.85As well (QW), both through 10 nm GaAs thin spacer. Spectroscopic measurements show that capture and emission efficiency for SQ...

Optically pumped green converter structures based on three-dimensional (3D) inverse pyramids were studied. The green emission intensity is determined by the conversion rate ηc and the absorption fraction ηa, indicating the InGaN/GaN quantum well (QW) crystal quality and its absorption capability, respectively. 15 was found to be the optimal QW number based the epitaxial condition for that serie...

We have studied the photoluminescence (PL) properties of a GaAs/AlxGa1−xAs quantum well (QW) system consisting of three QW’s with different thicknesses, in which the widest one (7.8 nm) has an excited-subband exciton state located slightly below the barrier band edge. Using above-barrier excitation with a power density of about 10 W/cm at 13 K, a strong PL emission peak appears on the high-ener...

We investigated whether the relative contribution of the baroreflex and central commands to the control of heart period differs between spontaneously hypertensive rats (SHR) and Wistar-Kyoto normotensive rats (WKY) during physiological behavior. Rats were instrumented with an arterial catheter and with electrodes for discriminating wakefulness, nonrapid eye movement sleep (NREMS), and rapid eye...