Through an extensive series of high-precision numerical computations the optimal complete photonic band gap (PBG) as a function dielectric contrast $\ensuremath{\alpha}$ for variety crystal and disordered heterostructures, we reveal striking universal behaviors sensitivity $\mathcal{S}(\ensuremath{\alpha})\ensuremath{\equiv}d\mathrm{\ensuremath{\Delta}}(\ensuremath{\alpha})/d\ensuremath{\alpha}...

We have examined in detail the optical properties of InGaN quantum wells ~QWs! grown on pyramidal GaN mesas prepared by lateral epitaxial overgrowth ~LEO! in a metalorganic chemical vapor deposition system that resulted in QWs on $1-101% facets. The effects of In migration during growth on the resulting QW thickness and composition were examined with transmission electron microscopy ~TEM! and v...

Semiconductor nanocrystals (NCs) exhibit size-controlled spectral tunability and chemical flexibility, making them attractive materials for use in new and emerging applications, such as fluorescent tagging, lasing, light-emitting diodes and nanoelectronics. One-dimensional quantum wires (QWs) and quantum rods (QRs) have become a class of attractive materials as their dimensional anisotropic beh...

We present a study on the influence of strain-relieving InAlAs buffer layers metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy GaAs. Residual strain in layer, InGaAs barrier and InAs were assessed X-ray diffraction high-resolution transmission electron microscopy. By carefully choosing composition profile thicknesses virtually unstrained barriers embedding an well with thick...

We present a systematic investigation of intersubband transitions in nonintentionally doped $m\text{\ensuremath{-}}\mathrm{plane}$ ZnO/ZnMgO quantum wells (QWs). The is performed using photoinduced absorption spectroscopy at room temperature under optical pumping by UV laser to generate electron-hole pairs. All samples exhibit TM-polarized intersubbandlike resonances. However, the peak transiti...

We report on transport experiments through high-mobility gate-tunable undoped InSb quantum wells (QWs). Due to the elimination of any Si modulation doping, gate-defined two-dimensional electron gases in QWs display a significantly increased mobility $260\phantom{\rule{0.16em}{0ex}}000\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{2}/\mathrm{Vs}$ at rather low density $2.4\phantom{\rule{4pt...

The properties of thin InGaN films deposited via MOVPE on non-planar GaN surfaces are investigated in detail. Using a comprehensive combination of different investigation methods including transmission electron microscopy, spatially and time-resolved cathodoluminescence experiments and modeling of the radiative recombination kinetics a precise description of the semipolar QW properties can be p...

The influence of a c(2x2) ordered interface alloy of 3d transition metals at the ferromagnet/nonmagnet interface on interlayer exchange coupling (IXC), the formation of quantum well states (QWS) and the phenomenon of Giant MagnetoRe-sistance is investigated. We obtained a strong dependence of IXC on interface alloy formation. The GMR ratio is also strongly influenced. We found that Fe, Ni and C...