The properties of GeSiO films consisting of Ge nanodots embedded in SiO2 matrix, prepared by sol-gel and magnetron sputtering methods, followed by an adequate thermal annealing, are studied and discussed in this paper. Structural investigations were performed by means of transmission electron microscopy and Xray photoelectron spectroscopy. In the sol-gel films one finds amorphous Ge nanodots di...

The luminescence properties of inorganic perovskite CsPbBr3 nanocrystals (NCs) with emissions of 492 and 517 nm under thermal annealing treatment were studied by temperature-dependent photoluminescence (PL) spectroscopy. The CsPbBr3 NCs were annealed in vacuum at various temperatures. It was found that the NCs exhibited significant thermal degradation of PL at thermal annealing temperatures abo...

InN films grown by molecular beam epitaxy have been subjected to 2 MeV He + irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be us...

rapid thermal processing (rtp) has become a key technology for semiconductor device manufacturing in a variety of applications, such as thermal oxidation, annealing, and thin-film growth. hence, understanding the radiative properties of silicon and other relevant materials is essential for the analysis of the thermal transport processes. we have analyzed and calculated the spectral, directional...

Two-dimensional (2D) nanoscale oxides have attracted research interest owing to their electronic, magnetic optical and catalytic properties. If they could be manufactured on a large scale, 2D oxides would be attractive for applications ranging from electronics to energy conversion and storage. Herein, we report facile fabrication of oxide nanosheets by rapid thermal annealing of corresponding h...

We known that the three major methods to recrystallize amorphous silicon are: Rapid Thermal Annealing(RTA), Excimer Laser Crystallization (ELC) and Solid Phase Crystallization(SPC)[3.1][3.2].Solid phase crystallization and RTA has several advantages over laser crystallization which include smoother surfaces, better uniformity, and batch process in furnace annealing. But in order to achieve the ...

Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and depositi...

The formation of a uniform, high tensile stress and low silicide/Si interfacial resistance nickel silicide in nMOSFET by introducing pulsed laser annealing (PLA) is reported. This annealing approach facilitated the phase transformation of nickel silicide to Si-rich NiSix compounds using a low-thermal-budget process, improves the silicide/Si interface regularity and avoids familiar (111) NiSi2 f...