We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters lea...

When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al1-x Ga x As0.56Sb0.44 p-i-n diode wafers (Ga composition from 0 to 0.15), plus measurements of avalanche g...

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Controllable production of nanometre-sized structures is an important field of research, and synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with numerous applications, for example, in electronics, photonics, biology and medicine. Nanoscale electronic devices created inside nanowires, such as p-n junctions, were reported ten years ago. More recently, hetero-...

Emission of terahertz (THz) electromagnetic (EM) waves from a high critical temperature (Tc) superconductor intrinsic Josephson junction (IJJ) is a new and promising candidate for practical applications of superconducting devices. From the engineering viewpoint, the IJJ THz source is competitive against the present semiconducting THz sources such as quantum cascade lasers (QCLs) and resonance t...

We theoretically study the electron transport through a resonant tunneling diode (RTD) based on strained AlxGa1−xN/In0.1Ga0.9N/AlxGa1−xN quantumwells embedded in relaxed n-Al0.15Ga0.85N/strained In0.1Ga0.9N emitter and collector. The aluminum composition in both injector and collector contacts is taken relatively weak; this does not preclude achieving a wide band offset at the border of the pre...