1Institute of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia 2Department of Physics, College Of Education, Al-Mustansiriya University, Baghdad, Iraq 3Department of Electrical Engineering, College Of Engineering, Al-Mustansiriya, Baghdad, Iraq Abstract: in this work ZnO/Cu/ZnO transparent conductive multilayer films are p...

Structural and optical properties of ZnO1-хSх (0 ≤ x ≤ 1.0) thin films grown onto sapphire substrates (с-Al2O3) at 300 C by radio frequency (rf) magnetron sputtering of ZnS ceramic target are studied. A possibility of purposeful controlling sulfur content and, as consequence, ZnO1-хSх band gap energy via changing the ratio of the partial pressures of argon and oxygen are revealed. Linear depen...

ZnO films were coated on the order of micrometer thickness on various substrates using RF magnetron sputtering. Glass, mica and Si were used as amorphous and crystalline substrates to study film growth. X-ray diffraction measurements revealed a self-induced, (002) oriented texture on all substrates. Effects of residual stresses on growth behavior and possible mechanisms of textured crystallizat...

This study fabricates p-type Ni1−xO:Li/n-Si heterojunction solar cells (P/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that...

We have studied the effects of placing Co/Pt multilayers on dysprosium-iron-garnet doped with bismuth and aluminum. The garnet was deposited by RF-magnetron sputtering and crystallized by rapid thermal annealing. The Co/Pt multilayers were then deposited by DC-magnetron sputtering. The garnet thickness was held constant at lOOOA while the ColPt multilayer had the form of [3ACo/9APt], with n ran...

Highly transparent and conducting fluorine-doped ZnO (FZO) thin films were deposited onto glass substrates by radio-frequency (RF) magnetron sputtering, using 1.5 wt% zinc fluoride (ZnF2)-doped ZnO as sputtering target. Structural, electrical, and optical properties of the FZO thin films were investigated as a function of substrate temperature ranging from room temperature (RT) to 300°C. The cr...

The properties of barium titanate (BaTiO3 , BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MISFET) structures with BaTiO3 thin films (containing La2O3 admixture) acting as gate insulator were investigated. The films were produced by means o...

In this study, we have investigated temporal evolution of silicon surface topography under 500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both angles, parallel-mode ripples are observed at low fluences (up to 2 × 1017 ions cm-2) which undergo a transition to faceted structures at a higher fluence of 5 × 1017 ions cm-2. Facet coarsening takes place at further...

We report for the first time a non-template based facile growth of hexagonal (β) AgI nanorods and nanoplates easily fabricated by rf magnetron sputtering on Ag/Sn bilayers upon controlled iodination. The structural and morphological evolution of the β-AgI nanostructures is characterized by X-Ray Diffraction, Atomic Force Microscopy and optical spectroscopy. Sputtering induced disorder in precur...

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