The reversible logic can be used in various research areas, e. g. quantum computation, cryptography and signal processing. In the paper we study reversible logic circuits with additional inputs, which consist of NOT, CNOT and C2NOT gates. We consider a set F (n, q) of all transformations Bn → Bn that can be realized by reversible circuits with (n+q) inputs. An analogue of Lupanov’s method for t...

Background: Nomophobia is the fear of being disconnected from one’s mobile phone, prevailing in modern area. To the best of our knowledge, no Persian psychometric scales are available for investigating nomophobia among Iranians. Therefore, we here aimed to translate and validate the Nomophobia Questionnaire (NMP-Q) for being used in Iran. Methods:...

Answer selection is a crucial subtask of the open domain question answering problem. In this paper, we introduce the Bi-directional Gated Memory Network (BGMN) to model the interactions between question and answer. We match question (P ) and answer (Q) in two directions. In each direction(for example P → Q), sentence representation of P triggers an iterative attention process that aggregates in...

A Hybrid Hall effect device utilizes the magnetic fringing field at the edge of a ferromagnet to produce Hall effect in the two dimensional electron gas confined in a semiconductor structure underneath the magnet. Addition of an electrostatic gate to this passive device provides an extra handle in the form of the gate bias to modulate the output Hall voltage. We demonstrated that silicon MOSFET...

Quantum computing is a form of unconventional computation utilizing quantum effects as a fundamental part of its calculations. It has already been used in practical signal encryption in the 2010 Soccer World Cup, and there is competition amongst many governments to build more powerful and practical quantum computers. Although quantum computing is the most widespread and invested in form of unco...

Based on the multiple subbands quasi-ballistic transport theory, we investigate the electronic transport of nano size In0.53Ga0.47As nFinFETs with Al2O3 gate dielectric, emphasizing the saturation current region. 1D mobile charge density and gate capacitance density are introduced for the first time to describe the nano-FinFET transport property under volume inversion. With the extracted effect...

We have measured the temporal pulse shape of a mid-infrared free electron laser using a 60 fs Ti:sapphire pulse as an optical gate. By employing a differential technique to simultaneously measure the instantaneous infrared intensity and its time derivative, we have reconstructed the pulse shape with sub-ps resolution, despite jitter the order of 50 ps between the two lasers. The experiment has ...

AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al2O3 substrates reveals anomalies on Ids–Vds–T and Igs–Vgs–T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current degradation. An explanation of the trapping mechanism r...

A novel feature-domain 2D motion estimation system based on the straight-line Hough transform (SLHT) is presented. It operates on 256256-pixel binary images and consists of two main blocks. The rst block does preprocessing work including smoothing the boundary, tracing and integrating the contours, and detecting dominant points. The second block computes the Hough transform on contour segments ...

A simple method of measuring charge in surface states as a function of the surfacepotential in MOS transistors or MOS capacitors is proposed. A constant d.c. current is fed into the gate of an MOS transistor and with the help of an operational amplifier, the gate voltage V, with respect to the bulk is plotted as a function of gate charge Q,. The gate charge as a function of the surfacepotential...