نتایج جستجو برای: scattering ellipsometry

تعداد نتایج: 116656  

Journal: :International journal of optics and photonics 2021

Design and Simulation of Graphene/2D Interlayer Surface Plasmon Resonance Biosensor Based on Ellipsometry Method

Journal: :Macromolecular bioscience 2014
Laura Mazzocchetti Theodoros Tsoufis Petra Rudolf Katja Loos

The successful synthesis of amylose brushes via enzymatic "grafting from" polymerization and the detailed characterization of all synthetic steps by X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry measurements are reported. Au and Si surfaces are amino-functionalized with self-assembled monolayers (SAMs) of cystamine and 3-aminopropyldimethyethoxysilane (APDMES), respectiv...

2003
Hans Wallinga

Random sample selection method in backpropagation results in convergence on the error (root of mean squared error, RMSE) surface. These problems, which are caused by the extreme (worst-case) errors, can be solved by a different sample selection strategy. A sample selection strategy has been proposed, which provides lower maximal errors and a higher confidence level on the expense of slightly in...

2002
A. VAN SILFHOUT

The influence of ion bombardment on the structure of the silicon lattice has been the subject of numerous investigations. The various effects induced by low energy ion bombardment in the outer layers of a solid lattice damage, ion implantation, surface roughness, sputtering and surface state changes are reflected in changes of the complex dielectric constant Z, which can be measured by means of...

Journal: :Journal of Physics: Condensed Matter 2016

Journal: :Journal of the European Optical Society: Rapid Publications 2023

Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) a hybrid optical metrology study for fast non-destructive detection, classification, characterisation defects 4H–SiC homoepitaxial layers on substrates. Ellipsomet...

2012
M. Foldyna

We characterized two samples consisting of photoresist layers on silicon with square arrays of square holes by spectroscopic ellipsometry (SE) and Mueller matrix polarimetry (MMP). Hole lateral dimensions and depths were determined by fitting either SE data taken in conventional planar geometry or MMP data in general conical diffraction configurations. A method for objective determination of th...

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