The move from planar CMOS-based microelectronics and advanced device structures like FinFETs and FD SOI structures to devices with 1-dimensional nanostructures (Si, Ge, III-V semiconductors) requires fundamental studies of nanostructures and innovative approaches to integrate the new materials and structures into microelectronic products. The approach of nanowire-devices for reconfigurable fiel...

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measuremen...

We have derived a general formula describing current noise in multimode ballistic channels connecting source and drain electrodes with Fermi electron gas. In particular ~at eV@kBT), the expression describes the nonequilibrium ‘‘shot’’ noise, which may be suppressed by both Fermi correlations and space charge screening. The general formula has been applied to an approximate model of a two-dimens...

A new gate module with iridium as a degradation resistant Schottky contact for GaN based HEMT devices is developed. Conformal deposition of Schottky and barrier metal in the gate trench provides sealing of the semiconductor. Sputtering is the enabling technology that provides low stress iridium contacts from low damage processing. Patterning of the gate contact is achieved by a subtractive meth...

A flexible oxygen sensor based on individual ZnO nanowires is demonstrated with high sensitivity at room temperature and the influence of the piezotronic effect on the performance of this oxygen sensor is investigated. By applying a tensile strain, the already very high sensitivity due to the Schottky contact and pre-treatment of UV light is even further enhanced.

Abstract The fabrication and I-V characteristics of the novel AlGaN/GaN field effect diode are reported. This diode has a distinguishing anode structure and the relatively thick AlGaN barrier layer in contrast a conventional field-effect Schottky barrier diode (FESBD). By using fluoride-based plasma treatment, we could reduce its turn-on voltage to 0 V and decrease its leakage current at the re...

Our main result is a description of the boundary of the parameter space of classical Schottky groups affording two parabolic generators within the larger parameter space of all Schottky groups with two parabolic generators. This boundary is surprisingly different from that of the larger space. It is analytic while the boundary of the larger space is fractal. Approaching the boundary of the smal...

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitan...

The impact of forces due to the difference in mechanical stresses between the Schottky contacts and passivation films on the electrical properties of (0001) AlGaN/GaN Schottky diodes is numerically analyzed in the framework of the edge force model. The compressive (tensile) passivation films induce negative (positive) piezoelectric charges below the Schottky contacts in the GaN channels and bri...

Large attention has been devoted worldwide to the investigation of hydrogen sensors based on various Schottky diodes. We prepared graphite semimetal Schottky contacts on polished n-InP and n-GaN wafers partly covered with nanoparticles of catalytic metals Pd or Pt by applying colloidal graphite. Metal nanoparticles were deposited electrophoretically from colloids prepared beforehand. Deposited ...