Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal-semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors,...

In this paper, we apply our proposed early parallel adaptive computing methodology for numerical solution of semiconductor device equations with triangular meshing technique. This novel simulation based on adaptive triangular mesh, finite volume, monotone iterative, and a posteriori error estimation methods, is developed and successfully implemented on a Linux-cluster with message passing inter...

An architecture in which nand p-type materials alternate laterally in the active ®lm of a device with a spatial period of about a carrier di€usion length would lead to ecient (opto)electronic devices for photovoltaic energy conversion and switching, among others. Such an architecture, although dicult to achieve with conventional silicon-based schemes, is within reach using semiconductor nanoc...

This is a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices. Ga2O3 possesses excellent material properties, in particular for power device applications. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured from a single-crystal bulk synthesized by melt–growth me...

_ This paper presents some of the techniques used to introduce simulation of semiconductor fabrication processes to undergraduate electrical engineering students at the American University of Sharjah. Students use Silvaco Athena process simulator and Atlas device simulator to perform experiments on semiconductor fabrication processes. Simulation results are compared with the theoretically expec...

A device-level simulation is presented for studying wave propagation along metal–insulator–semiconductor interconnects. A set of nonlinear equations is first formulated by combining the motion equations of charged carriers and Maxwell’s equations. The set of nonlinear equations is then transformed into the frequency domain, which leads to sets of nonlinear equations for the fundamental mode and...

in this paper, we examine the effect of the energy difference between the l- and the -valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in mesfets. to do this, we use the monte carlo simulation to demonstrate the superiority of the ingaas mesfet, made on a semi-insulating inp substrate, over both inp and ...

of this thesis: Low-dimensional electronic systems confined in semiconductor nanostructures possess unique properties and can be used not only to improve device performances but also

The curtain has been raised on new century. Prior to discussing the present status and trends of power semiconductor devices, allow us to briefly review Fuji Electric’s history with power devices. The semiconductor device was invented and developed in the latter half of the 20th century. When Shockley, Brattain, and Bardeen invented a transistor in 1948, they did not think that this transistor ...