Topographic and chemical mapping of materials at high resolution define the goals of a microscope. Force microscopy can provide methods for simultaneous topography and chemical characterization of materials. Here we describe the use of the atomic force microscope to map chemical variations of semiconductor samples. Chemical maps of semiconductor InP/InGaAs alloys have been determined with 3 nm ...

The field of nanostructure physics has been growing rapidly in recent years and much theoretical and experimental insight has been gained giving access to a more efficient device oriented applications. In the nanotechnology area one of the main objectives is the production of materials with specific characteristics from the bulk materials. In this context we present here the study of a quantum ...

In this paper we undertake the theoretical analysis of a two-stage semiconductor thermoelectric module (TEM) which contains an arbitrary and different number of thermocouples, n1 and n2, in each stage (pyramid-styled TEM). The analysis is based on a dimensionless entropy balance set of equations. We study the effects of n1 and n2, the flowing electric currents through each stage, the applied te...

The fundamental competition between order and disorder lies at the heart of materials science and technology. Interactions between atoms or electrons with sub nanometer spacings can lead to collective organization into states with long-range order. Order in electronic states gives rise to physical consequences such as magnetism, ferroelectricity and superconductivity. In bulk materials, the col...

Ge2Sb2Te5 Eunae Cho, Seungwu Han, Dohyung Kim, Hideki Horii, and Ho-Seok Nam Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea Process Development Team, Memory R&D Center, Semiconductor Business, Samsung Electronics, Yongin 446-71, Korea Center for Materials and Processes of Self-Assembly and School of Advanced Materials Engineering, Kookmin Univer...

The engineering of advanced heterostructure and nanoscale semiconductor devices has made essential a detailed understanding of, and control over, the structure and properties of semiconductor materials and devices at the atomic to nanometer scale. Cross-sectional scanning tunneling microscopy provides unique and powerful capabilities for characterization of structural morphology and electronic ...

where ∆T and q are the temperature drop and heat flux across the interface. Predicting the thermal boundary resistance of semiconductor/semiconductor interfaces is important in devices where phonon interface scattering is a significant contributor to the overall thermal resistance (e.g., computer chips with high component density). Such predictions will also lead to improvements in the design o...

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