Metal assisted chemical etching (MacEtch) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film. In this review article, we highlight the characteristics of MacEtch of silicon (Si) including controllability of the produced sidewall roughness, the inherent high aspect ratio, the weak crystal or...

One-dimensional semiconductor nanostructures, such as nanowires (NWs), have attracted tremendous attention due to their unique properties and potential applications in nanoelectronics, nano-optoelectronics, and sensors. One of the challenges toward their integration into practical devices is their large-scale controlled assembly. Here, we report the guided growth of horizontal CdSe nanowires on...

Enhanced synthetic control of the morphology, crystal structure, and composition of nanostructures can drive advances in nanoscale devices. Axial and radial semiconductor nanowires are examples of nanostructures with one and two structural degrees of freedom, respectively, and their synthetically tuned and modulated properties have led to advances in nanotransistor, nanophotonic, and thermoelec...

Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling electron spins in semiconductors are generically subject to rather fast decoherence. In two-dimensional quantum wells made of zinc-blende semiconductors, however, ...

We theoretically show that spontaneously interlayer-coherent bilayer quantum Hall droplets should allow robust and fault-tolerant pseudospin quantum computation in semiconductor nanostructures with voltage-tuned external gates providing qubit control and a quantum Ising Hamiltonian providing qubit entanglement. Using a spin-boson model, we estimate decoherence to be small (approximately 10(-5)).

Coulomb-blockade oscillations of the conductance are a manifestation of singleelectron tunneling through a System of two tunnel junctions in series (see Fig. 1) [l]-[5]. The conductance oscillations occur äs the voltage on a nearby gate electrode is varied. This setup is the SET transistor described in See. 6 of Chap. 2. The number N of conduction electrons on an Island (or dot) between two tun...

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue lightemitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of highly efficient white LEDs has passed successful developments. A serious physical issue still remained, which prevents their use for high pow...

Different morphologies of Ag2Te nanostructures were synthesized using TeCl4 as a new precursor and hydrazine hydrate as reducing agent by a hydrothermal method. Various parameters that affect on morphology and purity of nanostructures were optimized. According to our experiments the best time and temperature for preparation of this nanostructure are 12 h and 120 °C. The photo-catalytic behaviou...

We report the results of two fundamental transport measurements at a Landau level filling factor ν of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B = 0 and ν = 1/2. The experimental results demonstrate semi-classical charge transport by composite f...

We report on a picosecond ultrasonics study of nanostructures by high frequency ultrasound. A sound pulse is generated when an ultra short laser pulse is absorbed in a metal transducer film. The sound propagates across a thin layer (0.5-2 microns) of water and is then reflected from the surface of the sample being examined. The efficiency of optoacoustic detection of the reflected sound is enha...