– A potential scheme is proposed for realizing a two-qubit quantum gate in semiconductor quantum dots. Information is encoded in the spin degrees of freedom of one excess conduction electron of each quantum dot. We propose to use two lasers, radiating two neighboring QDs, and tuned to blue detuning with respect to the resonant frequencies of individual excitons. The two-qubit phase gate can be ...

We review recent advances in the field of quantum dot lasers on silicon. A summary of device performance, reliability, and comparison with similar quantum well lasers grown on silicon will be presented. We consider the possibility of scalable, low size, weight, and power nanolasers grown on silicon enabled by quantum dot active regions for future short-reach silicon photonics interconnects. © 2...

in this paper, based on the coupled-mode and carrier rate equations, a dynamic model and numerical analysis of a multi quantum well (mqw) chirped distributed feedback semiconductor optical amplifier (dfb-soa)  all-optical flip-flop is precisely derived. we have analyzed the effects of strains of qw and mqw and cross phase modulation (xpm) on the dynamic response, and rise and fall times of the ...

We propose a self-consistent microscopic model of vertical sequential tunneling through multiple quantum wells. The model includes a detailed description of the contacts, uses the transfer Hamiltonian for expressions of the current and it treats the Coulomb interaction within a mean-field approximation. We analyze the current density through a double well and a superlattice and study the format...

We present results from solutions of the Semiconductor Kadanoo-Baym Equations (full two-time semiconductor Bloch equations) with selfenergies in quasistatic Born approximation, for GaAs single quantum wells. We concentrate on memory and correlation eeects under fs-pulse excitation conditions. A remarkable feature is the observed kinetic energy increase which is due to the buildup of correlation...

Characteristic temperature coefficients of the threshold current ( 0) and the external differential quantum efficiency ( 1) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristics temperature coefficients of the threshold current ( ) and the external differential quantum efficiency ( 1) are expre...

M. Kugler,1 K. Korzekwa,2 P. Machnikowski,2,* C. Gradl,1 S. Furthmeier,1 M. Griesbeck,1 M. Hirmer,1 D. Schuh,1 W. Wegscheider,3 T. Kuhn,4 C. Schüller,1 and T. Korn1,† 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany 2Institute of Physics, Wrocław University of Technology, PL-50-370 Wrocław, Poland 3Solid State Physics Laboratory, ETH Zurich...

Abstract. We propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of thickness of the quantum well may cause a transition of Berry p...