Abstract– We are developing monolithic pixel devices utilizing a 0.2 μm Fully Depleted Silicon-on-Insulator (FD-SOI) process technology provided by OKI Semiconductor. We have investigated thinning the devices to 100 μm. Thinning enhances the feature of monolithic SOI sensors in views of minimizing the overall material and realizing full depleted devices. The latter is necessary for backside il...

This brief presents a new, simple method of measuring the generation lifetime in silicon-on-insulator (SOI )MOSFET’s. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across finished Separation by IMplantation of OXygen (SIMOX) wafers and Bonded and Etchedback SOI (BESOI) wafers. BESOI material evaluate...

Applications involving smart cards have rapidly emerged since a few years. Up to now, chips are realized in conventional bulk technology. But as the need for performance rises, alternative technologies must be investigated. In this paper we study the feasibility of realizing the blocks for a smart card chip in Silicon-On-Insulator (SOI) technology. For most of the circuit blocks, SOI realizatio...

Novel device architectures such as ultra-thin body silicon-on-insulator (UTB SOI) MOSFETs which are more resistant to some of the sources of intrinsic parameter fluctuations are expected to play an increasingly important role beyond the 45 nm technology node. Apart from reduced device variability UTB SOI SRAM would benefit considerably from the superior electrostatic integrity and reduced junct...

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 1...

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the int...

We show by simulation that electron mobility and velocity overshoot are greater when strained inversion layers are grown on SiGe-On-insulator substrates ~strained Si/SiGe-OI! than when unstrained silicon-on-insulator ~SOI! devices are employed. In addition, mobility in these strained inversion layers is only slightly degraded compared with strained bulk Si/SiGe inversion layers, due to the phon...

An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangularand ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 μm thick SOI ridge wa...

We have been developing low power cryogenic readout electronics for space borne large format far-infrared image sensors. As the circuit elements, a fully-depleted-silicon-on-insulator (FD-SOI) CMOS process was adopted because they keep good static performance even at 4.2 K where where various anomalous behaviors are seen for other types of CMOS transistors. We have designed and fabricated sever...

Z. Wu, C. Ng, C. McGuinness and E. Colby, SLAC, Menlo Park, CA 94025, U.S.A. Abstract Three-dimensional woodpile photonic bandgap (PBG) waveguide enables high-gradient and efficient laser driven acceleration, while various accelerator components, including laser couplers, power transmission lines, woodpile accelerating and focusing waveguides, and energy recycling resonators, can be potentially...