نتایج جستجو برای: silicon on insulator technology
تعداد نتایج: 8634169 فیلتر نتایج به سال:
A high efficiency broadband grating coupler for Silicon-On-Insulator waveguides was designed. The grating coupler is defined by locally adding a poly-Silicon layer on top of the existing waveguide layer structure prior to grating etching. Adding this poly-Silicon layer reshapes the grating structure which changes its diffraction properties. Coupling efficiencies as high as 78% at a wavelength o...
We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.
Optical Coherence Tomography (OCT) is an emerging optical imaging technology with ever growing number of applications. OCT enables micron scale cross-sectional imaging of subsurface microstructures by measuring the backscattered intensity of light from subsurface layers of the materials. Current OCT imaging systems are fiber or free space optics based and they can be miniaturized through integr...
Optical coherence tomography (OCT) is a medical imaging technology capable of producing high-resolution, crosssectional images through inhomogeneous samples, such as biological tissue. It has been widely adopted in clinical ophthalmology and a number of other clinical applications are in active research. Other applications of OCT include material characterization and non-destructive testing. In...
Silicon-on-nitride ridge waveguides are demonstrated and characterized at midand near-infrared optical wavelengths. Silicon-on-nitride thin films were achieved by bonding a silicon handling die to a silicon-on-insulator die coated with a low-stress silicon nitride layer. Subsequent removal of the silicon-on-insulator substrate results in a thin film of silicon on a nitride bottom cladding, read...
The radiation hardness of diode array devices based on silicon on insulator technology and bulk technology was investigated. The devices were exposed to 24 GeV/c protons (at CERN) up to a fluence of 4.1 10 p/cm. Charge collection following irradiation indicated a significant reduction in minority carrier lifetime. The damage constant was calculated using alpha particle spectroscopy methods. T...
A very compact (device area around 40 μm²) optical ammonia sensor based on amicroring resonator is presented in this work. Silicon-on-insulator technology is used insensor design and a dye doped polymer is adopted as sensing material. The sensor exhibitsa very good linearity and a minimum detectable refractive index shift of sensing materialas low as 8x10-5, with a detection limit around 4 ‰.
Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 1...
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