We report on the successful fabrication of silicon quantum wires with SiO 2 boundaries on SiGe/Si heterostructures by combining Si/SiGe/Si heteroepitaxy, selective chemical etching, and subsequent thermal oxidation. The observational result of scanning electron microscope is demonstrated. The present method provides a well-controllable way to fabricate silicon quantum wires. PACS: 81.15; 81.60;...

Silicon-doped (Si-doped) diamond films were deposited on a Co-cemented tungsten carbide (WC-Co) substrate using the hot filament chemical vapor deposition (HFCVD) method with a mixture of acetone, tetraethoxysilane (TEOS), and hydrogen as the recant source. The as-deposited doped diamond films were characterized with field emission scanning electron microscopy (FE-SEM), Raman spectrum, and X-ra...

The performance of silicon-based VLSI circuits has steadily been improved by scaling down device dimensions, and a nearly exponential growth of microelectronics capabilities has been achieved. However, maintaining this top-down miniaturization trend is getting exceedingly hard due to fundamental physical and technological limitations as well as of the economical limitation. Nonconventional bott...

The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of microand nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO2-Si interface and SiO2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence ...

A nitride spacer with an underlying deposited tetraethoxysilane oxide, that behaves as a convenient etch stop layer, is a popular choice for sidewall spacer in modern complementary metal–oxide– semiconductor process flows. In this work we have investigated the effect of the silicon nitride spacer process on the boron profile in silicon and the related dose loss of B from the Si into the silicon...

The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulating the silicon concentrations in samples, the main sensitizers of Er(3+) ions can be tuned from Si...

Mono-crystalline silicon experiences various phase transformations under different loading conditions. This paper reveals, with the aid of molecular dynamics simulations, that scratching the silicon {001} surface along the [110] direction under a load of 0.8 μN or more would produce stable 5 coordinated body centered tetragonal (bct-5) silicon in the subsurface. By examining the effect of this ...

Photoinitiated hydrosilylation was used to attach acrylic acid to the surface of photoluminescent silicon nanoparticles, thereby producing water-dispersible, propionic-acid-terminated particles. From transmission electron microscope (TEM) observations, the average diameters of the synthesized nanocrystals were 1.9-2.4 nm. It is likely that smaller particles (<1.5 nm) were also present but could...