نتایج جستجو برای: silicon wafers

تعداد نتایج: 82772  

2004
C. Gui M. Elwenspoek

This paper reports a new method for making high aspect ratio Single Crystalline Silicon (SCS) microstructures om multi layer substrates using Chemical Mechanical Polishing (CMP), Silicon Fusion Bonding (SFB) and Reactive Ion Etching (NE) techniques. First Si-Si02-PolySi-Si02-Si sandwich wafers were fabricated using CMP and SFB. Then microstructures were fabricated on these sandwich wafers using...

2015
Kunal Kashyap Amarendra Kumar Chuan-Torng Huang Yu-Yun Lin Max T. Hou J. Andrew Yeh

The unavoidable occurrence of microdefects in silicon wafers increase the probability of catastrophic fracture of silicon-based devices, thus highlighting the need for a strengthening mechanism to minimize fractures resulting from defects. In this study, a novel mechanism for manufacturing silicon wafers was engineered based on nanoscale reinforcement through surface nanotexturing. Because of n...

2003
Robert Falster

Accurate control of the defectivity of silicon crystals and wafers is a subject of immense importance to both the silicon and IC industries. Exploding costs of wafer development and production as well as the processing of 300mm wafers means that predictive defect engineering is now, more than ever a requirement for both industries. There is little scope any more for iterative approaches to thes...

2017
Eyad Abdur-Rahman Ibrahim Alghoraibi Hassan Alkurdi

A micropyramid structure was formed on the surface of a monocrystalline silicon wafer (100) using a wet chemical anisotropic etching technique. The main objective was to evaluate the performance of the etchant based on the silicon surface reflectance. Different isopropyl alcohol (IPA) volume concentrations (2, 4, 6, 8, and 10%) and different etching times (10, 20, 30, 40, and 50 min) were selec...

2013
A. Orpella J. Puigdollers D. Soler J. Bertomeu J. Andreu

In this work we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the Quasi-Steady-State Photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on nand p-type float...

Journal: :Tissue engineering 2005
Christina Fidkowski Mohammad R Kaazempur-Mofrad Jeffrey Borenstein Joseph P Vacanti Robert Langer Yadong Wang

Vital organs maintain dense microvasculature to sustain the proper function of their cells. For tissue- engineered organs to function properly, artificial capillary networks must be developed. We have microfabricated capillary networks with a biodegradable and biocompatible elastomer, poly(glycerol sebacate) (PGS). We etched capillary patterns onto silicon wafers by standard micro-electromechan...

2005
Daniel Macdonald Thomas Roth L. J. Geerligs Andres Cuevas

Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900oC) have been monitored by carrier lifetime measurements. Two cooling rates were investigated. The first was considered ‘fast’, meaning the interstitial Fe had no time to diffuse to precipitation sites, and should therefore be frozen-in, despite being far above the solubilit...

2011
Jay P. John Mark E. Law

The diffusivity of phosphorus in isoconcentration backgrounds under inert conditions in silicon is investigated. Phosphorus is implanted at low dose into silicon wafers that are constantly doped with arsenic and boron. These samples are annealed to remove any damage. Secondary ion mass spectroscopy (SIMS) measurements are taken of these as-implanted samples. The wafers are then diffused at both...

Journal: :IOP Conference Series: Materials Science and Engineering 2010

2001
S. Nashima O. Morikawa K. Takata M. Hangyo

Optical properties of doped silicon wafers have been measured by means of terahertz time domain reflection spectroscopy. A method is proposed to obtain the relative phase by reflection accurately. By using this method, the relative phase is obtained within an error of less than 10 mrad at 1 THz. The experimentally obtained complex conductivity of relatively high-doped silicon (r 50.136 V cm) in...

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