In this paper, we report the hot carrier and the ESD related device characteristics in 0.1-μm 3.3 V I/O LDD MOSFETs without hybrid (Phos. + As) typed LDD structure. In order to suggest the device guideline for the LDD and the channel doping profiles, the investigation focuses on the analysis of electrical characteristics, such as the short channel effect, the reverse short channel effect, the s...

In this paper, a power SJMOSFET (Super junction MOSFET) transistor is simulated using PISCES-II, a 2-D numerical device simulator. The doping densities and device dimensions are chosen so as to simulate a typical device structure. These simulations are aimed at understanding the device physics through various electrical quantities like potential distribution, electric field distribution, and el...

In this paper, utilising the non-equilibrium Green’s function (NEGF) formalism within new device simulator NESS (Nano-Electronic Software Simulator) developed at University of Glasgow’s Device Modelling Group, we present quantum mechanical simulations current flow in double-barrier III-V GaAs-AlGaAs nanowire resonant tunneling diodes (RTDs). is a fast and modular Technology Computer Aided Desig...

The use of 3D simulations is essential in order to study the effects of fluctuations when devices are scaled to deep submicron dimensions. A 3D drift-diffusion device simulator has been developed to effectively simulate pseudomorphic high electron mobility transistors (pHEMTs) on a distributed memory multiprocessor computer. The drift-diffusion equations are discretized using a finite element m...

This paper describes a hybrid simulation environment, interfaced to an adjustable autonomous software architecture, for validation and evaluation of advanced designs using dynamic interactive scenarios. The simulator provides support for "real-time" evaluation of adjustable autonomy strategies. In such evaluations, control actions by the operator interact with hardware events, including device ...

A new electronically-controllable lossless floating inductance (FI) circuit (without any matching condition) has been presented, which employs only one Voltage Differencing Current Conveyor (VDCC), one grounded capacitor and one grounded resistor. The main aim of the paper is to present a new floating inductance simulator using single active device with minimum passive components. The proposed ...

A multidimensional, nonlinear finite-difference time-domain (NL-FDTD) simulator, which is constructed from a self-consistent solution of the full-wave vector Maxwell equations and dispersive (Lorentz), nonlinear (finitetime-response Raman and instantaneous Kerr) materials models, is used to study finite-length, corrugated, optical waveguide output couplers and beam steerers. Multiple-cycle, ult...

The implementation of a functional verification system using SystemC, system-level design language, is presented in this paper. SystemC is used in system-level design methodology because of the capability of system architectural model description and hardware/software design. The implemented verification system, which consists of various SystemC modules, in this paper can explore design space u...