نتایج جستجو برای: sputter etching
تعداد نتایج: 18291 فیلتر نتایج به سال:
The sputter erosion of arcing contacts is a very complex phenomenon, which is determined by the interaction between electromagnetic force, heat conduction and surface tension of liquid metal. A new model for evaluating the sputter erosion of electrodes is described in this paper, which is based on the electromagnetic forces against the molten pool, flowing velocity, kinetic energy and the surfa...
Background and Aim: The aim of this study was to investigate the shear bond strengthof composite to Emax porcelain using different methods of ceramic surface preparation (in vitro). Material and Methods: In this laboratory study, 36 porcelain disks were made and divided into four equal groups. The first group was prepared by sandblasting with 50 micron alumina particles, in the second group rec...
The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV) photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole...
The aim of this study was to evaluate the microtensile bond strength (microTBS) and the elemental contents of the adhesive interface created to normal versus caries-affected dentin. Extracted human molars with coronal carious lesions were used in this study. A self-etching primer/adhesive system (Clearfil Protect Bond) was applied to flat dentin surfaces with normal and caries-affected dentin a...
In plasma etching equipment for microelectronics fabrication, there is an engineered gap between the edge of the wafer and wafer terminating structures, such as focus rings. The intended purpose of these structures is to make the reactant fluxes uniform to the edge of the wafer and so prevent a larger than desired edge exclusion where useful products cannot be obtained. The wafer-focus ring gap...
The sputtering of hexagonal boron nitride due to low energy xenon ion bombardments occurs in various applications including fabrication of cubic boron nitride and erosion of Hall thruster channel walls. At low ion energies, accurate experimental characterization of sputter yields increases in difficulty due to the low yields involved. A molecular dynamics model is employed to simulate the sputt...
This article developed an ion thruster optic system sputter erosion depth numerical 3D model by IFE-PIC (Immersed Finite Element-Particle-in-Cell) and Mont Carlo method, and calculated the downstream surface sputter erosion rate of accelerator grid; compared with LIPS-200 life test data. The results of the numerical model are in reasonable agreement with the measured data. Finally, we predicted...
Simultaneous fitting of independently measured sputter-depth profiles of intensities of Auger electrons or photoelectrons from different Auger transitions (AES) or core levels (XPS) is shown to increase the reliability of the thus determined concentration-depth profiles in diffusion-annealed thin film systems, as compared to the usually applied single profile fitting. In this context an extensi...
All refractory, NbN/MgO/NbN (superconductor-insulator-superconductor) tunnel junctions have been fabricated by in situ sputter deposition. The influence ofMgO thickness (0.8-6.0 nm) deposited under different sputtering ambients at various deposition rates on current-voltage (IV) characteristics of small-area ( 30 X 30 pm) tunnel junctions is studied. The NbN/MgO/NbN trilayer is deposited in sit...
YBazCu,07 step-edge junctions are fabricated on SrTi03-substrates. The steps of 300nm height are milled by argon-ion-beam-etching (BE). The films are deposited by high-pressure on-axis magnetron sputter technique patterned to microbridges with widths down to 0.5pm by electron beam lithography and argon ion e t c h . For ratios of film tluckness to step height of t/h % the current-voltage charac...
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