Indium tin oxide (ITO) films have been deposited onto glass substrates by ifmagnetron sputtering without insitu substrate heating. The as-deposited films have an electrical resistivity of 5x1O a-cm, visible transmittance of about 85%, and infrared (IR) reflectance of above 80% at 5 jim. The effect of sputtering parameters on the deposition rate and the electrical and optical properties of ITO f...

Crystalline GaN films can be grown even on amorphous substrates with the use of graphene buffer layers by pulsed sputtering deposition (PSD). The graphene buffer layers allowed us to grow highly c-axisoriented GaN films at low substrate temperatures. Full-color GaN-based LEDs can be fabricated on the GaN/graphene structures and they are operated successfully. This indicates that the present tec...

Although the theory of high-angle elastic scattering of fast electrons is well developed, accurate calculation of the incident-energy threshold and cross section for surface-atom sputtering is hampered by uncertainties in the value of the surface-displacement energy Ed and its angular dependence. We show that reasonable agreement with experiment is achieved by assuming a non-spherical escape po...

Bismuth titanate (Bi,Ti,O,, :BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi20, was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H70)4] as a CVD source. The composition of films was controlled by changing RF power (P,,) of Bi,O, target and Ti source...

We have studied electron emission, luminescence and sputtering from thin Ar ®lms excited by 2 MeV protons. We varied the voltage, Va, of the anode surrounding the target, which extracts electrons from the ®lm and results in unbalanced positive charges. The resulting large internal electric ®elds alter sputtering and luminescence. At the beginning of irradiation of a freshly deposited ®lm, we ob...

InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorganic vapor phase epitaxy on single-crystal wafers. If we can utilize a low-cost epitaxial growth pro...

Sputtering properties of graphite and amorphous carbon substrates by hydrogen (H), deuterium (D), and tritium (T) at low incident energies have been studied with the use of classical molecular dynamics (MD) simulations. The sputtering simulations used here are accumulative in the sense that the surface modification due to impinging species are self-consistently taken into consideration. The sim...

In an effort to understand microscopic processes occurring between MgO protective layers and impinging plasma ions in a discharge cell of plasma-display panel, sputtering properties of MgO 100 surface by He, Ne, and Xe atoms are studied with molecular dynamics simulations. Interatomic potentials between constituent atoms are fitted to first-principles data sets for representative configurations...

Titania and doped-titania coatings can be deposited by a wide range of techniques; this paper will concentrate on magnetron sputtering techniques, including "conventional" reactive co-sputtering from multiple metal targets and the recently introduced high power impulse magnetron sputtering (HiPIMS). The latter has been shown to deliver a relatively low thermal flux to the substrate, whilst stil...

Arc and glow discharges are defined based on their cathode processes. Arcs are characterized by collective electron emission, which can be stationary with hot cathodes (thermionic arcs), or nonstationary with cold cathodes (cathodic arcs). A brief review on cathodic arc properties serves as the starting point to better understand arcing phenomena in sputtering. Although arcing occurs in both me...