نتایج جستجو برای: static random access memory
تعداد نتایج: 919182 فیلتر نتایج به سال:
Since the link rate is very high up to 40Gbps these days, scanning packets can spread very fast. At this high speed, only a small chance of missing on-going scanning activity can lead to catastrophic results. Thus, fast and accurate detection of scanners is a very important problem. High-speed packet processing usually requires high-speed memory, SRAM, and the size of SRAM is very limited compa...
We propose a novel substrate-bias control scheme for an FD-SOI SRAM that suppresses inter-die variability. The proposed circuits detect inter-die threshold-voltage variation automatically, and then maximize read/write margins of memory cells to supply the substrate bias. We confirmed that a 486-kb 6T SRAM operates at 0.42 V, in which an FS corner can be compared as much as 0.14 V or more. key w...
A closed loop self-tuning 256kb 6T SRAM with 0.38V-1.2V extended operating range using combined read and write assists and canary-based VMIN tracking is presented. 337X and 4.3X power reductions are achieved using multiple assists and VMIN tracking, respectively; combining both saves 1444X in active power and 12.4X in leakage at the 0.38V. Keywords—self-tuning SRAM; combined assists; canary SRA...
This paper introduces the architecture of a robust communication framework, which allows high quality data exchange for a distributed neutron detection system that works in a radiating environment. This distributed system needs a reliable data transfer infrastructure, since both the infrastructure and the sensing electronics are exposed to radiations but the former must keep error resilient. Fo...
This paper introduces a novel half-select resilient dual write wordline 8T (DW8T) SRAM with a sequential writing technique. The dual write wordlines are sequentially activated in a write cycle, and its combination with the half-VDD precharge suppresses the half-select problem. We implemented a 256-Kb DW8T SRAM and a half-VDD generator with a 40-nm CMOS process. The measurement results of the se...
The paper presents a radiation test methodology for Xilinx Virtex FPGAs based on the THESIC+ system.
In this paper we are going to propose a new SRAM bitcell for the purpose of less power consumption, read stability,less area than the existing Schmitt trigger based SRAM and other existing designs through a new design which is combined of virtual grounding with Read error reduction logic. Designs and simulations were done using DSCH and Microwind.
An SRAM reliability test macro is designed in a 1.2V, 65nm CMOS process for statistical measurements of Vmin degradation. An automated test program efficiently collects statistical Vmin data and reduces test time. The proposed test structure enables Vmin degradation measurements for different SRAM failure modes such as the SNM-limited case and the access-time-limited case. The impact of voltage...
The original CACTI tool was released in 1994 to give computer architects a fast tool to model SRAM caches. It has been widely adopted and used since. Two new versions were released to add area and active power modeling to CACTI. This new version adds a model for leakage power and updates the basic circuit structure and device parameters to better reflect the advances in scaling semiconductors w...
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