A computationally simple nonlinearity in the form of a threshold device for the blind separation of sub-Gaussian signals is derived. Convergence is shown to be robust, fast, and comparable to that of more complex polynomial nonlinearities. Together with the known signum nonlinearity for super-Gaussian distributions, which basically is a threshold device with the threshold set to zero, the gener...

There are three major sources of leakage current today, namely the sub-threshold leakage, gate leakage and the reverse biased junction band-to-band-tunneling leakage. These currents depend on the logic state of a CMOS circuit as determined by input pattern. Consequently, there exists a pattern that will produce the highest leakage current. Previously, researchers have investigated the problem o...

BACKGROUND This article presents epidemiological data on the prevalence of DSM-IV generalized anxiety disorder (GAD) and sub-threshold GAD (fulfilling three out of four GAD criteria) in young women together with data on co-morbidity and psychosocial functioning. The prevalence of clinically relevant worry and its predictive validity for the diagnosis of GAD were also examined. METHOD Young wo...

In the motor system, the periodic stimulation of one Ia-afferent input produces reflex muscle contractions at the input frequency. However, we observed that when two Ia monosynaptic reflex-afferent inputs are involved the periodic muscle contractions may occur at a frequency physically not present in the afferent inputs even when these inputs are sub-threshold. How can the muscles respond with ...

Digital circuits operating in the sub-threshold regime are able to perform minimum energy operation at a given delay. In the sub-threshold regime the circuit delay, and hence, the leakage energy consumption depend on the supply voltage exponentially. By reducing the idle time of the circuit, the energy-minimum supply voltage can be reduced, resulting in lower energy consumption. This paper firs...

This paper investigates the origins of sub-threshold slope degradation in vertical MOSFETs (v-MOSFETs) due to dry etching of the polysilicon surround gate. Control v-MOSFETs exhibit a degradation of subthreshold slope as the channel length is reduced from 250 to 100 nm, with 100 nm transistors having a value of 125 mV/dec and a DIBL of 210 mV/V. The effect of the polysilicon gate etch is invest...

In the first paper of this two-part series on the development of a water sustainability index for West Java, a conceptual framework of West Java Water Sustainability Index (WJWSI) was developed. It consists of three main parts: components, indicators/sub-indicators and threshold values. This second paper of the series presents the application of the Delphi technique, followed by in-depth interv...