Abstract Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, it is difficult reach higher level electrical characteristics only combination materials based on their i...

The electronic properties of a field-effect transistor with two different structures MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in presence biaxial strain are investigated. band show that these compounds semiconductors an indirect bandgap. Their gaps can be adjusted by applying in-plane strain. In following, variation energies valleys corresponding effective masses respec...

A detailed electrical characterization and transistor parameter extraction on 200 mm CMOS compatible GaN/Si HEMTs was performed down to deep cryogenic temperatures. The main parameters (threshold voltage Vth, low-field mobility ?0, subthreshold swing SS, source-drain series resistance Rsd) were extracted in linear region using the Y-function Lambert-W function methods for gate lengths 0.1 µm. m...

We demonstrated self‐aligned top‐gate (SATG) amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐film transistor (TFT) where the source/drain (S/D) regions were induced into a low resistance state by first coating thin hafnium (Hf) film and then performing thermal annealing in oxygen. The experimental results show that sheet of Hf‐treated a‐IGZO layer can be as 408 Ω/□. TFT fabricated proposed pr...

Abstract Ferroelectricity can reduce the subthreshold swing ( SS ) of metal-oxide-semiconductor field-effect transistors (MOSFETs) to below room-temperature Boltzmann limit ~60 mV/dec and provides an important strategy achieve a steeper . Surprisingly, by carefully tuning polarization switching dynamics BiFeO 3 ferroelectric capacitors commercial power MOSFET even be tuned zero or negative valu...

Artificial intelligence technology has fueled the requirement for flexible hardware. Although electronic devices have become promising candidates in recent years, they inevitably face problems like performance degradation caused by deformation. In this paper, we report a stable and indium tin oxide synaptic transistor with an ultralow back-sweep subthreshold swing of 28.52 mV/dec, which is ascr...

In the present article, we discuss cryogenic field-effect transistors. particular, saturation of subthreshold swing due to band-tailing is studied. It shown with simulations and experiments that engineering oxide-channel interfaces a strong increase gate oxide capacitance are effective in improving switching behavior device. The implication scaling on power consumption devices investigated, too...

Self-aligned four-terminal (4T) planar metal double-gate (DG) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature (LT), which is below 550◦C, to realize high performance and low power dissipation system-onglass (SoG). The top gate (TG) and bottom gate (BG) were formed from tungsten (W); the BG was embedded in the glass substra...