A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors dual gated reconfigurable transistors. The given calculates charge-carrier injection over barriers. This current separated into a field emission current, by charge carriers tunneling through barriers thermionic overcoming verification done comparing resu...

Abstract Reliable modeling of macroscopic melt motion induced by fast transients requires the accurate and computationally efficient description emitted current density that escapes to pre-sheath. The ITER sheaths surround hot tungsten surfaces during edge-localized modes are characterized important contributions from secondary electron emission backscattering as well coupling between thermioni...

Detailed statistical rate calculations combined with electron capture theory and kinetic modeling for the electron attachment to SF(6) and detachment from SF(6)(-) [Troe et al., J. Chem. Phys. 127, 244303 (2007)] are used to test thermionic electron emission models. A new method to calculate the specific detachment rate constants k(det)(E) and the electron energy distributions f(E,epsilon) as f...

In a high-vacuum diode, the volt-ampere characteristic of thermionic emission Na+ with surface NaxAu intermetallide. Its hysteresis was found, which is associated changes in caused by action an external electric field. accordance Schottky effect, analysis current–voltage and value work function estimated. Suggested mechanism from NaxAu.

Experimental observations have long-established that there exists a smooth roll-off or knee transition between the temperature-limited (TL) and full-space-charge-limited (FSCL) emission regions of current density-temperature ( J- T) (Miram) curve, density-voltage V) curve for thermionic cathode. In this article, we demonstrate experimentally observed does not require frequently used priori assu...