نتایج جستجو برای: thin film behaves as a semiconductor

تعداد نتایج: 14062177  

Journal: :Optics letters 2010
Sabarni Palit Jeremy Kirch Mengyuan Huang Luke Mawst Nan Marie Jokerst

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser...

2001
Qun Shen Xian-Rong Huang

Based on an expanded distorted-wave approximation, analytical intensity expressions are derived for phasesensitive reference-beam x-ray diffraction in both the transmission and the reflection cases. Results from this approach are compared with the rigorous n-beam dynamical theory calculations and are shown to be very accurate if the crystal is in the thin kinematic limit. The method represents ...

2015
Su Jeong Lee Tae Il Lee Jung Han Kim Chul - Hong Kim Jae - Min Myoung

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (I...

2013
Jongho Lee Li Tao Kristen N. Parrish Yufeng Hao Rodney S. Ruoff Deji Akinwande

Related Articles Complementary metal–oxide–semiconductor compatible athermal silicon nitride/titanium dioxide hybrid microring resonators Appl. Phys. Lett. 102, 051106 (2013) Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect Appl. Phys. Lett. 102, 053506 (2013) Programmable ZnO nanowire transistors using switchable polarizat...

2006
R D Pilkington

The University of Salford has led the way in the fundamental research that has underpinned the development of thin film copper indium diselenide (CIS) based photovoltaics. These devices have demonstrated exceptional energy conversion efficiencies (>19%) and a high tolerance to radiation damage and are thus leading researchers towards the 20% efficiency barrier. Conventional CIS thin film growth...

2017
Chien-Yie Tsay Wei-Tse Hsu

ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO,...

Journal: :Nano letters 2011
Young Keun Lee Chan Ho Jung Jonghyurk Park Hyungtak Seo Gabor A Somorjai Jeong Young Park

A continuous flow of hot electrons that are not at thermal equilibrium with the surrounding metal atoms is generated by the absorption of photons. Here we show that hot electron flow generated on a gold thin film by photon absorption (or internal photoemission) is amplified by localized surface plasmon resonance. This was achieved by direct measurement of photocurrent on a chemically modified g...

Journal: :IEICE Transactions 2014
Hiroshi Goto Hiroaki Tao Shinya Morita Yasuyuki Takanashi Aya Hino Tomoya Kishi Mototaka Ochi Kazushi Hayashi Toshihiro Kugimiya

We have investigated the microwave-detected photoconductivity responses from the amorphous In–Ga–Zn–O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as well as the influences of gate insulation films a...

Journal: :ACS applied materials & interfaces 2013
Dongyoon Khim Kang-Jun Baeg Juhwan Kim Minji Kang Seung-Hoon Lee Zhihua Chen Antonio Facchetti Dong-Yu Kim Yong-Young Noh

We report the fabrication of high-performance, printed, n-channel organic field-effect transistors (OFETs) based on an N,N-dialkyl-substituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) derivative, PDI-RCN2, optimized by the solvent-vapor annealing (SVA) process. We performed a systematic study on the influence of solubility and the chemical structure of a solvent used for the SVA pr...

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