In this paper, we consider both the utility of SOS substrates as a vehicle for optoelectronic packaging and the high speed silicon photodiodes available on a commercial SOS process. We show optical responses for six configurations of PIN photodiodes designed in this process. Our results indicate that photodiodes native to this process will operate at better than gigabit rates and produce signal...

We describe x-ray diffraction and magnetic measurements of annealed MnPt and NiMn spin valves as a function of MnPt ~NiMn! film thickness. Thin films (&5 – 10 nm) are not chemically ordered and hence not antiferromagnetic, which explains the lack of exchange coupling in these films. With increasing thickness, the L10 chemical order develops ~through coexistence between fcc and L10 phases! and t...

Recently, there has been much interest in using lubricated surfaces to achieve extreme liquid repellency: a foreign droplet immiscible with the underlying lubricant layer was shown to slide o at a small tilt angle<5. This behaviour was hypothesized to arise from a thin lubricant overlayer film sandwiched between the droplet and solid substrate, but this has not been observed experimentally. Her...

Compared to conventional solar cells on a substrate, thin film GaAs cells show a higher efficiency at a lower thickness due to back surface reflection. The optimal cell thickness is 1.7 μm. Thin film cells can also be illuminated from the rear side with an efficiency only 15% (relative) lower than for front side illumination.

Very thin (2.3-5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virt...

Transient reflectivity measurements using ultrashort pulse pump-probe techniques can provide very useful information on fast carrier dynamics in semiconductors. Several non-trivial problems encountered in measuring reflectivity changes have been described. These changes can be very small (ΔR/R ~10 or less) and hence measuring these small changes is not straightforward. The possible solutions in...

Internal friction in aluminum thin films on silicon substrates has been measured uaween 180 and 360 K as a function of strain amplitude. The amplitude dependence of internal fnction in the aluminum films has been evaluated from the data on the film-substrate composite and further converted into the plastic strain of the order of as a function of the effective stress on dislocation motion. The m...

Introduced are research activities that are under way at Seiko Epson Corporation under the company's "TFT New Age" program. The program includes R&D projects geared toward achieving high-performance TFTs, developing flexible electronic devices through the use of SUFTLA-TFT technology, and adopting a micro-liquid process for fabricating displays.

Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. By considering a circular thin-film/substrate system subject to arbitrarily non-uniform misfit strain distributions, we derive relations between the film stresses and the ...