Related Articles The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a −250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 62 (2012) The Si3N4/TiN Interface: 1. TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 33 (2012) The Si3N4/TiN Interface: 5. TiN/Si3N4 Grown...

(Z)-5-[2-(Benzo[b]thio-phen-2-yl)-1-(3,5-di-meth-oxy-phen-yl)ethen-yl]-1H-tetrazole methanol monosolvate, C19H16N4O2S·CH3OH, (I), was prepared by the reaction of (Z)-3-(benzo[b]thio-phen-2-yl)-2-(3,5-di-meth-oxy-phen-yl)acrylo-nitrile with tri-butyl-tin azide via a [3 + 2]cyclo-addition azide condensation reaction. The structurally related compound (Z)-5-[2-(benzo[b]thio-phen-3-yl)-1-(3,4,5-tri...

Titanium Nitride (TiN) is a wear resistant and complementary metal oxide silicon (CMOS) compatible material that is increasingly being investigated for MEMS applications. Incorporating any new material into a MEMS device requires the development of a processing strategy. This paper discusses a wet-etching strategy for patterning and releasing TiN features on Cr sacrificial layers. Filtered arc ...

The preparation of a series of extremely bulky secondary amines, Ar*N(H)SiR(3) (Ar* = C(6)H(2){C(H)Ph(2)}(2)Me-2,6,4; R(3) = Me(3), MePh(2) or Ph(3)) is described. Their deprotonation with either LiBu(n), NaH or KH yields alkali metal amide complexes, several monomeric examples of which, [Li(L){N(SiMe(3))(Ar*)}] (L = OEt(2) or THF), [Na(THF)(3){N(SiMe(3))(Ar*)}] and [K(OEt(2)){N(SiPh(3))(Ar*)],...

Because of its vast number of applications and high price many studies have been made on how to reduce the amount of platinum in catalysts. One method includes dispersing platinum nanoparticles in porous support materials. But electrically conductive carbon-based support materials-needed for fuel cell electrodes-permit nanoparticles to migrate and form larger clusters, leading to reduced cataly...