Bilayer Bi/In thin film thermal resists are Bi and In films which form an etch resistant material at ~7 mJ/cm laser exposures with near wavelength invariance from visible to EUV. New simulations predicted that Bi/In film of 15/15nm absorbs substantially at 1 nm, which projects single pulse exposure sensitivity of ~16 mJ/cm, hence suggesting good sensitivity to X-ray range. Thermal modeling has ...

A rapid method for simultaneously determining the anticonvulsant drugs carbamazepine, ethosuximide, phenobarbitone, phenytoin, primidone, and valproic acid is described. Blank plus single-point calibration gives reliable quantitation from therapeutic to high fatal concentrations, except for ethosuximide, for which it gives semiquantitative results. Whole blood and liver tissue samples containin...

We studied the humic-acid fraction isolated from a Spanish leonardite coal (Torrelapaja, Cretaceous basin belonging to the Utrillas facies) using a suite of chromatographic and spectroscopic techniques to characterize the structure of the carbon skeleton and the nature of the sulfur-containing compounds. In particular, analytical pyrolysis coupled to gas chromatography-mass spectrometry was use...

Bi-layer lift-off metallization techniques offer significant advantages in resolution, removal, process simplicity, undercut control and yield over conventional single-layer lift-off processes. Because of its ease of application, long shelf life and lower tool cost, the polydimethylglutarimide (PMGI) bi-layer process has become an attractive method for the metallization of III-V compound semico...

Mononuclear metal-dioxygen adducts, such as metal-superoxo and -peroxo species, are generated as key intermediates in the catalytic cycles of dioxygen activation by heme and non-heme metalloenzymes. We have shown recently that the geometric and electronic structure of the Ni-O2 core in [Ni(n-TMC)(O2)]+ (n = 12 and 14) varies depending on the ring size of the supporting TMC ligand. In this study...

Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved a...

An overview is given of the many applications that nm-thin pure boron (PureB) layers can have when deposited on semiconductors such as Si, Ge, and GaN. The application has been researched in most detail fabrication nm-shallow p + n -like Si diode junctions are both electrically chemically very robust. They presently used commercially photodiode detectors for extremeultraviolet (EUV) lithography...