By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage trans...

For point-of-care (POC) applications, robust, ultrasensitive, small, rapid, low-power, and low-cost sensors are highly desirable. Here, we present a novel biosensor based on a complementary metal oxide semiconductor (CMOS)-compatible silicon nanowire tunneling field-effect transistor (SiNW-TFET). They were fabricated "top-down" with a low-cost anisotropic self-stop etching technique. Notably, t...

In the last few years the downscaling of MOSFETs has caused problems due to the increasing short-channel effects (SCEs) in the sub 22 nm technology. The conventional MOS transistor has its physical limits due to the drift-diffusion current transport mechanism resulting in a minimal subthresholdslope of 60 . To fall below this physical limit a new device technology with an alternative carrier tr...

The tunnel field-effect transistor (TFET) is considered a promising next-generation due to its potentially limit-breaking low subthreshold swing and better immunity against short-channel effects. However, the ON-state current (ION) of TFETs has been critical problem. In this work, we investigated effects source doping concentration gradient (SDG) on ION n-type Si gate-all-around (GAA) nanowire ...

In this paper, we present a double gate JL-TFET based biosensor by varying the dielectric constant to detect various biomolecules through label-free detection technique. An investigation regarding properties and behavior device has been investigated with help of Silvaco TCAD. It is observed that Junction less TFET advantageous over JLFET TFETdue absence junctions. The proposed shows reduced sho...

During the last few decades, our lives have been changed dramatically by the unprecedented development of electronic devices, which become faster, more portable and less expensive, yet with more integrated functionalities. This progress was all driven by MOSFET downscaling, doubling the integration density of integrated circuits roughly every two years, as embodied in Moore's law. However, the ...