The magnetic Schrödinger operator, with Neumann boundary condition, on a smooth, bounded, and simply connected domain $$\Omega $$ of the Euclidean plane is considered in semiclassical limit. When has symmetry axis, splitting first two eigenvalues analyzed. explicit tunneling formula pure field established. analysis based pseudo-differential reduction to proof known optimal purely Agmon estimates.

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt so...

106204-9494 IJECS-IJENS © August 2010 IJENS I J E N S  Abstract— Superlattice emitter resonant tunneling bipolar transistor (SE-RTBT) is facing problem due to thermal transfer of electrons over barrier which causes diminishing negative differential resistance (NDR) effect. Therefore resonant tunneling diode (RTD) with higher quasibound state energy causes transfer of electrons by RT effect ins...

In this paper, we have studied tunneling effect of the spin-2 Bose condensate driven by external magnetic field. We find that the population transfers among spin-0 and spin-±1, spin-0 and spin-±2 exhibit the step structure under the external cosinusoidal magnetic field respectively , but there do not exist step structure among spin-±1 and spin-±2. The tunneling current among spin-±1 and spin-±2...

Nanowire band-to-band tunneling field-effect transistors ͑TFETs͒ are simulated using the Wentzel– Kramers–Brillouin ͑WKB͒ approximation and an atomistic, full-band quantum transport solver including direct and phonon-assisted tunneling ͑PAT͒. It is found that the WKB approximation properly works if one single imaginary path connecting the valence band ͑VB͒ and the conduction band ͑CB͒ dominates the tunne...

The quantum Hall state at total filling factor ν(T)=1 in bilayer systems realizes an exciton condensate and exhibits a zero-bias tunneling anomaly, similar to the Josephson effect in the presence of fluctuations. In contrast to conventional Josephson junctions, no Fraunhofer diffraction pattern has been observed, due to disorder induced topological defects, so-called merons. We consider interla...