In this paper we present an ultra low-voltage (ULV) floating-gate (FG) transconductance amplifier The amplifier can operate at supply voltages below 1V in a standard digital double poly CMOS process . The amplifier consists of a sinh shaped output current transconductance amplifier and a tanh shaped transconductance amplifier.

A 1.8 GHz low-noise amplifier has been designed and fabricated in a standard 0.35 pm CMOS process. Measurement results indicate that the amplifier has a forward gain (S21) of 10.5 dB and a noise figure of 3.94 dB, while consuming 40 mW from a 2.5 V supply.

Now it is well recognized that although Jansky discovered radio astronomy at decametric wavelengths, the quest for higher angular resolution and the difficulties in handling ionospheric effects have left the low frequency (below 150 MHz) spectrum poorly explored. This is despite many unique astrophysical questions that can be better addressed at low frequencies, and problems requiring accurate ...

A low-noise CMOS amplifier operating at a low supply voltage is developed using the two noise reduction techniques of autozeroing and chopper stabilization. The proposed amplifier utilizes a feedback with virtual grounded input-switches and a multiple-output switched opamp. The low-noise amplifier fabricated in a 0.18-μm CMOS technology achieved 50-nV/ √ Hz input noise at 1-MHz chopping and 0.5...

In this paper we explore the symmetric autozeroing ultra low-voltage current mirror, differential pair and transconductance amplifier and present some applications. The ultralow transconductance amplifier has a current boost function and resembles switch-cap and auto-zero circuits. The current boost technique have been used to implement ultra-low voltage digital logic. The simulated data presen...

This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB...

Several antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch, using 0.1-μm gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 μm GaAs substrate. The compact 0.7 mm two-stage X-band LNA demonstrated a 1.25 dB noise-figure at 10 GHz with an associated gain...

— A low power wideband noise amplifier (LNA) for 1GHz to 10GHz wireless has presented for wireless application in this dissertation work. Low power wideband noise amplifier is design by using resistive shunt feedback, current reuse, gain flatting techniques, and inductive feedback technique. The high mobility electron transistors are used to improve the Noise Figure (NF) and scattering paramete...