نتایج جستجو برای: valence band
تعداد نتایج: 149238 فیلتر نتایج به سال:
MgO films ~2 nm thick! were grown on Mo and W substrates while metastable impact electron ~MIES! and ultraviolet photoelectron spectroscopy ~UPS! ~HeI! spectra were collected in situ. Apart from the valence band emission no additional spectral features have been detected with electron spectroscopies. After exposing the oxide surface to Mg ~substrate temperature between 100 and 300 K! an additio...
The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature T(C). It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band...
The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. ...
The structural and electronic properties of cubic GaN are studied within the local density approximation by the full-potential linear muffin-tin orbitals method. The Ga 3d electrons are treated as band states, and no shape approximation is made to the potential and charge density. The influence of d electrons on the band structure, charge density, and bonding properties is analyzed. It is found...
We use two different ab initio quantum mechanics methods, complete active space self-consistent field theory applied to electrostatically embedded clusters and periodic many-body G0W0 calculations, to reanalyze the states formed in nickel(II) oxide upon electron addition and ionization. In agreement with interpretations of earlier measurements, we find that the valence and conduction band edges...
We report the energy level alignment evolution of valence and conduction bands of armchair-oriented graphene nanoribbons (aGNR) as their band gap shrinks with increasing width. We use 4,4″-dibromo-para-terphenyl as the molecular precursor on Au(111) to form extended poly-para-phenylene nanowires, which can subsequently be fused sideways to form atomically precise aGNRs of varying widths. We mea...
The electronic and atomic structures of amorphous transparent tin oxides have been investigated by a combination of X-ray spectroscopy and atomistic calculations. Crystalline SnO is a promising p-type transparent oxide semiconductor due to a complex lone-pair hybridization that affords both optical transparency despite a small electronic band gap and spherical s-orbital character at the valence...
We have measured the site-specific valence electronic structure of a-Fe2O3 by using a spatially modulated x-ray standing wave as the excitation source for photoemission. Contributions to the valence-band density of states from oxygen and iron ions are separated by this method. Both a bonding and nonbonding state originating from oxygen ions are obtained. The valence densities of states from iro...
A model is presented that successfully predicts electro-optical properties of Lanthanide materials, irrespective whether these materials are inorganic or organic, diluted or concentrated, metallic, semi-conducting or insulating. The model is firmly based on recent experimental data revealing that the variation in 4f and 5d energies relative to the valence band over the Ln series (La, Ce, Pr,.. ...
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