نتایج جستجو برای: vapour deposition
تعداد نتایج: 99614 فیلتر نتایج به سال:
High-quality ZnO nanobelts were synthesized through introducing an unsteady state in the vapour transport process and their applications in novel Schottky solar cells were demonstrated by contact-printing the ZnO nanobelt network onto a pre-patterned Pt electrode followed by the deposition of a Ti/Au electrode.
A low pressure vapour deposition (LPVD) technique is proposed as an environmentally friendly, cost-effective and versatile strategy for fabrication of sulfur nanomaterials. By controlling the characteristics of the deposit substrate for the LPVD, various sulfur-based nanomaterials have been obtained through a substrate-induced self-assembly process.
This paper is presented to give an overall view of pressure sensors in the previous two decades. The evolution of sensor technologies, different MEMS pressure sensors, their merits and demerits are discussed. Keywords— Fabry Perot Interferometer (F-P), Pressure Sensors, Electromagnetic Interference (EMI), Low pressure chemical vapour deposition (LPCVD).
germanium nanowires (genws) were synthesized using chemical vapor deposition (cvd) based on vapor–liquid–solid (vls) mechanism with au nanoparticles as catalyst and germanium tetrachloride (gecl4) as a precursor of germanium. au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in au colloidal solution, wh...
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
The influence of precursor structure and reactivity on properties of compound semiconductors grown by metalorganic chemical vapor deposition (MOCVD) is discussed and illustrated with examples for growth of GaAs, ZnSe, and A1,Gal-,N. Gas-phase and surface reactions of organometallic arsenic compounds provide understanding of variation in carbon incorporation levels with precursor structure. Surf...
A new form of hybrid carbon-based thin film was prepared via a pyridine chemical vapour deposition method. The as-obtained films consist of agglomerated flowerlike graphene nanowhiskers embedded in a uniform matrix of amorphous carbon. Schottky solar cells made from the hybrid films and n-type silicon show conversion efficiencies of approximately 1% under AM 1.5 illumination.
Tetrahedral framework aluminium was introduced in all-silica zeolite -COK-14 using Atomic Layer Deposition (ALD) involving alternating exposure to trimethylaluminium and water vapour. The modification causes permanent conversion of the originally interrupted framework of -COK-14 to a fully connected OKO type framework, and generates catalytic activity in the acid catalysed hydrocarbon conversio...
Physical vapour deposition of Mo on an FeS2{100} surface was performed at 170 K. Near-epitaxial growth of MoS2(0001) overlayers of the order of 1 nm thickness was observed when the Mo-covered substrate was subsequently heated to 600 K.
Perovskite thin films with various functional properties have been synthesized through the Metal Organic Chemical Vapour Deposition (MOCVD). The MOCVD processes, used for the fabrication of a variety of advanced materials in thin film form, rely upon application of a molten multi-element source. The challenging in-situ strategy involves the use of a molten source consisting of a second-generati...
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