Articles you may be interested in Room temperature deposition of alumina-doped zinc oxide on flexible substrates by direct pulsed laser recrystallization Appl. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methodsa) Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnet...

Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing the perfectly smooth interface between the AlN film and Si (100)...

Brillouin spectroscopy has been used to study the effect of the deposition temperature on the surface acoustic wave SAW propagation velocity of aluminum nitride AlN films. The results show a dependence of the SAW propagation velocity on the growth temperature of AlN films. The highest value of acoustic velocity was obtained for the film elaborated without heating. Structural characterization of...

Traditional research on production scheduling in aluminum industry, aimed to certain production process, simply pursued the output as the highest aim, scheduled based on experience, so that the result of scheduling cannot reach the global optimization, and cannot realize production scheduling and resource allocation with the aim of optimal energy consumption, resulting in the waste of energy. T...

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Micron-thick boron films have been deposited by Pulsed Laser Deposition in vacuum on several substrates at room temperature. The use of high energy pulses (>700 mJ) results in the deposition of smooth coatings with low oxygen uptake even at base pressures of 10 -4 -10 -3 Pa. A detailed structural analysis, by X-Ray Diffraction and Raman, allowed to assess the amorphous nature of the deposited f...

Atomic layer deposition was employed to deposit relatively thick ( 30 nm) aluminum oxide (Al2O3) using trimethylaluminum and triply-distilled H2O precursors onto epitaxial graphene grown on the Si-face of silicon carbide. Ex situ surface conditioning by a simple wet chemistry treatment was used to render the otherwise chemically inert graphene surface more amenable to dielectric deposition. The...