نتایج جستجو برای: aluminum electrodes

تعداد نتایج: 90077  

Journal: :Advanced Materials Interfaces 2023

The present work addresses a new finding observed while performing aluminum dissolution experiments for supercapacitors (SCs) stability investigation. Supercapacitor (SC) electrodes based on carbon-coated foils are electrochemically cycled in harsh conditions into bis-trifluoromethylsulfonyl imide (TFSI)-based electrolyte and using Acetonitrile (ACN) as solvent. Dissolution of is with subsequen...

Journal: :Siberian journal of life sciences and agriculture 2022

The authors have assessed the possibility of electrochemical synthesis a wide range reagents based on titanium trichloride as part work. Despite growing demand for and its derivatives, production technology this reagent has not been improved long period. Traditional technologies feature high environmental industrial hazards, process itself energy consumption complex hardware scheme. As prelimin...

Journal: :Advanced photonics research 2021

Flexible OLEDs In article number 2100108, Seunghyup Yoo and co-workers present flexible organic light-emitting diodes (OLEDs) with pure ultraviolet (UV) emission by using silver- aluminum-based dielectric-capped thin metal top electrodes. By carefully considering the properties of materials in UV region, several design issues specific to are successfully addressed.

Journal: :Chemical Industry & Chemical Engineering Quarterly 2023

Two modes of electrochemical harvesting for microalgae were investigated in the current work. A sacrificial anode (aluminum) was used to study electrocoagulation-flotation process, and a nonsacrificial (graphite) investigate electroflotation process. The inspected effect chloride ions concentration interelectrode distance on performance processes. results demonstrated that both electrodes achie...

2003
James Swensen Jerzy Kanicki Alan J. Heeger Christos D. Dimitrakopoulos Ananth Dodabalapur

The electrical properties of polymeric thin film transisitors (P-TFTs) based on poly(9,9-dioctylfluorene-cobithiophene) alternating copolymer (F8T2) have been studied. Device performance was compared for amorphous silicon nitride deposited by LPCVD and PECVD techniques, aluminum oxide deposited by sputtering, titanium oxide deposited by sputtering, and thermal silicon oxide gate dielectrics. A ...

Journal: :The Journal of chemical physics 2006
Yan-hong Zhou Xiao-hong Zheng Ying Xu Zhao Yang Zeng

Current rectification effect in an asymmetric molecule HCOO-C6H4-(CH2)n sandwiched between two aluminum electrodes has been studied using an ab initio nonequilibrium Green's function method. The conductance of the system decreases exponentially with the increasing number n of CH2. The phenomenon of current rectification is observed such that a very small current appears at negative bias and a s...

2005
S Oh K Cicak R McDermott K B Cooper K D Osborn R W Simmonds M Steffen J M Martinis D P Pappas

We have developed a two-step growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminum (Al) oxide layer at room temperature and crystallizing it at a high tem...

2008
M. Barra A. Cassinese P. Graziosi

With the general objective of studying interfaces between ferromagnetic materials and organic semiconductors, we report ac impedance investigations on La0.7Sr0.3MnO3 (LSMO)/tris(8-hydroxyquinoline)aluminum (Alq3)/Al and Indium Tin Oxide (ITO)/Alq3/Al heterostructures, in the frequency range between 20 Hz and 1 MHz. The comparison of the equivalent circuits deduced to fit the experimental ac res...

Journal: :Physical review letters 2000
Landman Barnett Scherbakov Avouris

Silicon nanowires assembled from clusters or etched from the bulk, connected to aluminum electrodes and passivated, are studied with large-scale local-density-functional simulations. Short ( approximately 0.6 nm) wires are fully metallized by metal-induced gap states resulting in finite conductance ( approximately e(2)/h). For longer wires ( approximately 2.5 nm) nanoscale Schottky barriers dev...

Journal: :ACS applied materials & interfaces 2016
Yimao Wan Chris Samundsett James Bullock Thomas Allen Mark Hettick Di Yan Peiting Zheng Xinyu Zhang Jie Cui Josephine McKeon Ali Javey Andres Cuevas

In this study, we present a novel application of thin magnesium fluoride films to form electron-selective contacts to n-type crystalline silicon (c-Si). This allows the demonstration of a 20.1%-efficient c-Si solar cell. The electron-selective contact is composed of deposited layers of amorphous silicon (∼6.5 nm), magnesium fluoride (∼1 nm), and aluminum (∼300 nm). X-ray photoelectron spectrosc...

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