Phase transformation of thin film (∼30 nm) In2Se3/Si(111) (amorphous → crystalline) was performed by resistive annealing and the reverse transformation (crystalline → amorphous) was performed by nanosecond laser annealing. As an intrinsic-vacancy, binary chalcogenide semiconductor, In2Se3 is of interest for non-volatile phasechange memory. Amorphous InxSey was deposited at room temperature on S...

A theoretical formula based on carrier scattering in systems with a certain degree of disorder has been derived, which describes well the buildup transients of persistent photoconductivity and carrier transport due to the conduction-band tail states in semiconductor alloys. Important parameters, including the distribution of tail states caused purely by alloy disorder, can be obtained by compar...

Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition temperature in GaMnAs, and pro...

The dielectric properties of ZrO2–Al2O3 nanolaminates, deposited via atomic layer deposition, and their impact on the performance and stability of indium gallium zinc oxide and zinc tin oxide amorphous oxide semiconductor thin-film transistors TFTs are investigated. It is found that nanolaminate dielectrics can combine the advantages of constituent dielectrics and produce TFTs with improved per...

The exceptional electronic and optical properties of high-quality organic crystals are well known and have been exploited in active electronic and optoelectronic devices such as field-effect transistors, photodetectors and optical modulators. This paper describes a room temperature method for in-plane growth of organic crystal needles from initially amorphous thin films of the molecular organic...

We applied an automated semiconductor synthesis and screen system to discover overcoating film materials and optimize coating conditions on the BiVO4/WO3 composite photoelectrode to enhance stability and photocurrent. Thirteen metallic elements for overcoating oxides were examined with various coating amounts. The stability of the BiVO4/WO3 photoelectrode in a highly concentrated carbonate elec...

The studies of irradiation damage in silica are of significant interest because of its application in nuclear reactors, nuclear waste containers, optical fibers, and semiconductor devices [1,2]. Although there are a number of publication showing the effect of electrons, ions, protons, alpha-particles irradiation on microstructural changes of silica, understanding deformation behavior under appl...